MT29E3T08EUHBBM4-3:B TR

Memory IC Overview

The Micron MT29E3T08EUHBBM4-3:B TR is a NAND flash memory component utilizing TLC technology with a total capacity of 3 Tbit. It features an organization of 384 G x 8 and an 8-bit data bus width. The device operates within a voltage range of 2.7 V to 3.6 V and supports parallel interface communication. It is housed in a 132-LBGA package (12x18 mm) suitable for surface mount installation. The operational temperature range extends from 0°C to +70°C, classifying it for commercial applications.

Memory IC Feature Summary

• High-density storage capability through 3D NAND architecture
• Parallel interface support for system integration
• Commercial-grade thermal stability

Memory IC Applications

• Embedded storage systems
• Consumer electronics devices
• Industrial control units

Memory IC Procurement Notes

Verify current availability status as the component may be discontinued or subject to limited supply. Confirm RoHS compliance details directly with the manufacturer or authorized distributors before procurement. Ensure the specific suffix matches design requirements. Check for obsolescence notices to plan for potential lifecycle transitions.

Memory IC Selection Notes

Select this part for designs requiring 3 Tbit capacity with an 8-bit parallel interface. Ensure the PCB layout accommodates the 132-LBGA footprint. Verify that the host controller supports the required voltage levels and timing parameters. Consider the commercial temperature range limits when defining the operating environment constraints.

Memory IC Part Context

This component belongs to the Micron MT29F/MT29E series of NAND flash memories. These devices are designed for high-capacity data storage needs in embedded applications. The series utilizes advanced manufacturing processes to achieve high density within a compact package form factor.