MT29E6T08ETHBBM5-3:B

Description：IC FLASH 6TBIT PARALLEL 333MHZ
Series：-
Mfr：Micron Technology Inc.
Package：Tray

SKU:481908c9e29d Category: Memory IC Brand: Micron Technology Inc.

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Product introduction

MT29E6T08ETHBBM5-3:B is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 6TBIT PARALLEL 333MHZ. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT29E6T08ETHBBM5-3:B

Description：IC FLASH 6TBIT PARALLEL 333MHZ
Series：-
Mfr：Micron Technology Inc.
Package：Tray
Memory Type：Non-Volatile
Memory Format：FLASH
Technology：FLASH - NAND
Memory Size：6Tbit
Memory Organization：768G x 8
Memory Interface：Parallel
Clock Frequency：333 MHz
Write Cycle Time - Word, Page：-
Voltage - Supply：2.5V ~ 3.6V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：-
Package / Case：-
Supplier Device Package：-

Memory IC datasheet and documents for MT29E6T08ETHBBM5-3:B

MT29E6T08ETHBBM5-3:B

Memory IC Overview

The MT29E6T08ETHBBM5-3:B is a Micron Technology NAND flash memory component utilizing TLC technology with a 6 Tbit capacity. It features a parallel interface, 768 G x 8 organization, and an 8-bit data bus width. The device operates within a supply voltage range of 2.5V to 3.6V and supports clock frequencies up to 333 MHz. It is housed in a 16DP LBGA package and functions within an operating temperature range of 0°C to 70°C.

Memory IC Feature Summary

High-density storage using Triple-Level Cell (TLC) architecture for efficient data retention.
Parallel interface support enabling high-speed data transfer operations.
Industrial-grade thermal stability suitable for demanding operational environments.

Memory IC Applications

Embedded systems requiring non-volatile data storage
Consumer electronics with high-capacity memory needs
Industrial control units

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability before integration. Ensure the obsolete status does not impact long-term supply chain requirements for your project lifecycle.

Memory IC Selection Notes

Select this part for applications necessitating high-density parallel NAND flash with industrial temperature ratings. Compare against similar MT29E series variants regarding pin compatibility and electrical specifications. Ensure system design accommodates the specific voltage and timing requirements of the parallel interface.

Memory IC Part Context

This component belongs to the Micron MT29E series of NAND flash memories. It represents a high-capacity solution designed for robust data storage in embedded applications. The series is known for combining density with reliable performance standards across various consumer and industrial sectors.

Memory IC Replacement Considerations

Check for compatible upgrades within the MT29E family. Verify pinout and electrical parameter alignment when substituting with other Micron NAND flash devices to ensure seamless integration without hardware redesign.