MT29F128G08CBCBBH6-6R:B TR

Memory IC Overview

The Micron MT29F128G08CBCBBH6-6R:B TR is a NAND flash memory component within the MT29F series. It features a storage capacity of 128 Gbit with an organization of 16 G x 8. The device utilizes a parallel interface and operates asynchronously. It is housed in a VBGA package containing 152 pins. The operational power supply voltage ranges from 2.7 V to 3.6 V, and it supports surface mount installation.

Memory IC Feature Summary

• Supports asynchronous parallel data transfer for standard interface compatibility
• Provides high-density non-volatile storage suitable for compact form factors
• Designed for reliable performance in consumer electronics applications

Memory IC Applications

• Portable digital devices requiring embedded storage
• Consumer electronics with limited board space
• Industrial control systems needing durable memory solutions

Memory IC Procurement Notes

Verify the specific suffix '6R:B' against official Micron documentation to confirm exact timing and package variations. Ensure the tape and reel packaging matches assembly line requirements. Confirm RoHS compliance status through the manufacturer's current datasheet before finalizing procurement orders.

Memory IC Selection Notes

Select this part when a 128 Gbit SLC NAND solution is required with a 152-pin VBGA footprint. Compare electrical characteristics such as voltage range and bus width against system constraints. Evaluate thermal performance and physical dimensions relative to available PCB real estate during the design phase.

Memory IC Part Context

This component belongs to the Micron MT29F family of NAND flash memories. These devices are engineered for high reliability and density. The specific model integrates advanced manufacturing processes to deliver consistent performance across various operating conditions while maintaining a small physical profile.