MT29F1G01ABAFD12-AAT:F TR

Memory IC Overview

The MT29F1G01ABAFD12-AAT:F TR is a Micron Technology SLC NAND flash memory device with a 1 Gbit storage capacity organized as 1 G x 1. It features an asynchronous SPI interface and operates within a voltage range of 2.7 V to 3.6 V. The component is housed in a TBGA-24 package, suitable for surface mount technology (SMD/SMT) installation.

Memory IC Feature Summary

• Serial Peripheral Interface (SPI) connectivity for compact system integration
• Single-Level Cell (SLC) architecture ensuring high endurance and data retention
• Asynchronous timing operation for flexible controller interfacing

Memory IC Applications

• Embedded firmware storage
• Industrial control systems
• Consumer electronics devices

Memory IC Procurement Notes

Verify the specific suffix 'AAT' against official Micron documentation to confirm exact binning or quality grade specifications. Confirm availability status as distribution channels may list obsolete or end-of-life inventory. Ensure the TBGA-24 package dimensions align with PCB footprint requirements before procurement.

Memory IC Selection Notes

Select this component when a 1 Gbit non-volatile storage solution with a small TBGA-24 footprint is required. The asynchronous SPI interface simplifies design compared to parallel alternatives. Verify that the 2.7 V to 3.6 V operating voltage matches the target system power rails.

Memory IC Part Context

This part belongs to the Micron MT29F series of SLC NAND flash memories. These devices are designed for applications requiring reliable data storage in space-constrained environments. The series typically supports standard SPI protocols and offers varying capacities and package options.