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MT29F1T08EELEEJ4-M:E TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 1TBIT VBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MT29F1T08EELEEJ4-M:E TR
- Description：IC FLASH 1TBIT VBGA
- Series：-
- Mfr：Micron Technology Inc.
- Package：Tape & Reel (TR)
- Memory Type：-
- Memory Format：FLASH
- Technology：-
- Memory Size：1Tbit
- Memory Organization：128G x 8
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MT29F1T08EELEEJ4-M:E TR
Memory IC Overview
The Micron MT29F1T08EELEEJ4-M:E TR is a 1 Tbit NAND flash memory IC utilizing Triple-Level Cell (TLC) technology. It features an 8-bit parallel interface and is organized as 128 M x 8. The device operates within a voltage range of 2.5 V to 2.5 V and supports an industrial temperature range from 0°C to +70°C. It is housed in a 132-VBGA package with dimensions of 12x18 mm.
Memory IC Feature Summary
- Triple-Level Cell architecture for high-density data storage
- Parallel interface supporting 8-bit data bus width
- Industrial temperature operation capability
Memory IC Applications
- Solid State Drives (SSDs)
- Embedded systems requiring high-capacity storage
Memory IC Procurement Notes
Verify current lifecycle status directly with Micron Technology Inc., as availability may be limited or subject to discontinuation notices. Confirm package integrity and RoHS compliance through official datasheets before integration into production designs.
Memory IC Selection Notes
Select this component for applications requiring 1 Tbit capacity with parallel interface constraints. Ensure system power supply stability at 2.5 V and thermal management aligns with the 0°C to +70°C operating range. Consider TLC error rates in write-heavy environments.
Memory IC Part Context
This part belongs to the Micron MT29F series of NAND flash memories. It shares architectural similarities with other 1 Tbit variants like the MT29F1T08EELEEJ4-T:E, differing primarily in packaging and specific suffix designations defined by Micron.
Memory IC Replacement Considerations
Direct substitutes include MT29F1T08EELEEJ4-T:E and MT29F1T08EMCAGJ4-5M:A. Verify pin compatibility and electrical specifications against original design requirements before substitution.
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