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MT29F256G08EBCAGB16A3WC1-R is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 256GBIT PARALLEL DIE. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MT29F256G08EBCAGB16A3WC1-R
- Description：IC FLASH 256GBIT PARALLEL DIE
- Series：-
- Mfr：Micron Technology Inc.
- Package：Bulk
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NAND (TLC)
- Memory Size：256Gbit
- Memory Organization：32G x 8
- Memory Interface：Parallel
- Clock Frequency：333 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：2.7V ~ 3.6V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
Memory IC datasheet and documents for MT29F256G08EBCAGB16A3WC1-R
Memory IC Overview
The MT29F256G08EBCAGB16A3WC1-R is a 256 Gbit (32 G x 8) TLC NAND flash memory die manufactured by Micron Technology. It features a parallel interface with an operating clock frequency of 333 MHz and operates at 1.8 Volts. The component supports a commercial temperature range of 0°C to +70°C and is RoHS compliant. This non-volatile memory device is classified as obsolete within the manufacturer's current product portfolio.
Memory IC Feature Summary
- Utilizes 3D NAND architecture for high-density data storage
- Supports parallel interface communication protocols
- Designed for commercial temperature operation environments
Memory IC Applications
- Embedded storage systems requiring parallel NAND connectivity
- Industrial control units utilizing commercial-grade components
- Legacy hardware maintenance and replacement scenarios
Memory IC Procurement Notes
This component is officially listed as obsolete by Micron Technology Inc. Procurement requires verification of availability through authorized distributors or secondary market suppliers. Buyers must confirm part authenticity, lot codes, and moisture sensitivity levels prior to acquisition. Supply continuity is not guaranteed by the original manufacturer.
Memory IC Selection Notes
Engineers should evaluate this obsolete part only for legacy system maintenance where redesign is impractical. New designs must select currently supported Micron NAND alternatives with equivalent density and interface specifications. Verify that voltage levels and temperature ranges meet specific application requirements before integration.
Memory IC Part Context
This part belongs to Micron’s 3D NAND flash memory family, specifically designed for high-capacity storage applications. As an obsolete component, it represents previous generation technology. The designation indicates a 256 Gbit capacity with x8 organization, serving as a reference point for historical design documentation and backward compatibility assessments.
Memory IC Replacement Considerations
No direct public substitute part numbers are confirmed for this obsolete model. Designers must consult Micron’s current NAND portfolio for compatible replacements. Ensure new selections match interface types, pin configurations, and electrical characteristics to maintain system functionality.
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