Memory IC MT29F32G08CBCCBH1-12Z:C product image

MT29F32G08CBCCBH1-12Z:C

  • Description:IC FLASH 32GBIT PARALLEL 100VBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tube

SKU:41a08dae9a7b Category: Brand:

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MT29F32G08CBCCBH1-12Z:C is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 32GBIT PARALLEL 100VBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT29F32G08CBCCBH1-12Z:C

  • Description:IC FLASH 32GBIT PARALLEL 100VBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tube
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND
  • Memory Size:32Gbit
  • Memory Organization:4G x 8
  • Memory Interface:Parallel
  • Clock Frequency:83 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-VBGA
  • Supplier Device Package:100-VBGA (12x18)
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT29F32G08CBCCBH1-12Z:C

MT29F32G08CBCCBH1-12Z:C

Memory IC Overview

The MT29F32G08CBCCBH1-12Z:C is a 32 Gbit Multi-Level Cell (MLC) NAND flash memory device manufactured by Micron Technology. It features an x8 data bus width and supports both asynchronous and synchronous I/O interfaces compliant with ONFI standards. The device operates within a voltage range of 2.7 V to 3.6 V for VCC and VCCQ. It utilizes a 100-VBGA package measuring 12x18 mm. Synchronous operation supports clock rates up to 12 ns (DDR), achieving throughput of 166 MT/s per pin, while asynchronous mode offers 50 MT/s. The operating temperature range extends from 0°C to +70°C.

Memory IC Feature Summary

  • Supports Open NAND Flash Interface (ONFI) 2.2-compliant protocols for standardized interoperability.
  • Utilizes Multi-Level Cell (MLC) technology to achieve high storage density within the 32 Gbit capacity.
  • Provides flexible I/O timing modes, including synchronous DDR operation at 166 MT/s and asynchronous modes.
  • Integrates advanced command sets such as program cache, read cache sequential/random, and multi-plane operations.

Memory IC Applications

  • Embedded systems requiring non-volatile data storage
  • Consumer electronics devices
  • Industrial control applications

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific suffix matches the required electrical specifications and package dimensions. Ensure handling procedures account for moisture sensitivity levels during storage and assembly. Review current product status, as this part may be classified as obsolete in certain catalogs. Validate compatibility with existing system voltage and interface requirements before integration.

Memory IC Selection Notes

Select this component when a 32 Gbit MLC NAND solution with x8 parallel interface is required. It is suitable for designs needing ONFI 2.2 compliance and support for both synchronous and asynchronous timing modes. Consider the 100-VBGA package constraints and the 0°C to +70°C industrial temperature range. Evaluate power consumption profiles against system battery or thermal limitations. Ensure the host controller supports the necessary command set and ECC requirements for MLC reliability.

Memory IC Part Context

This device belongs to Micron's MT29F series of NAND flash memories. It represents a high-density storage solution leveraging MLC architecture. The series is designed for embedded applications requiring reliable non-volatile data retention. The specific model integrates standard ONFI interfaces to facilitate easy integration into various digital systems.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-references with Micron directly or authorized distributors for equivalent or newer generation parts if this obsolete unit is no longer sourced.

Memory IC FAQ

What is the maximum synchronous data throughput per pin?

The device supports a synchronous throughput of 166 MT/s per pin when operating in DDR mode with a 12 ns clock rate.

Does the device support multi-plane operations?

Yes, the device includes multi-plane commands allowing simultaneous operations across multiple planes to improve performance.

MT29F32G08CBCCBH1-12Z:CMT29F32G08CBCCBH1-12Z:C

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