MT29F4T08EULEEM4-T:E TR

Memory IC Overview

The Micron MT29F4T08EULEEM4-T:E TR is a NAND flash memory component with a total storage capacity of 4 Tbit. It features an organization of 512 G x 8 and utilizes an 8-bit parallel interface. The device operates within a voltage range of 2.6 V to 3.6 V and supports an operating temperature range from 0°C to +70°C. It is housed in a 132-LBGA package measuring 12x18 mm.

Memory IC Feature Summary

• High-density non-volatile storage architecture
• Parallel interface for data transfer
• Surface-mountable LBGA packaging

Memory IC Applications

• Data logging systems
• Industrial control units
• Consumer electronics storage

Memory IC Procurement Notes

Verify current availability status as the component may be subject to discontinuation or limited supply conditions. Confirm specific ordering suffixes and package variants directly with the manufacturer or authorized distributors to ensure compatibility with existing design specifications and long-term sourcing requirements.

Memory IC Selection Notes

Select this part for applications requiring high-capacity parallel NAND storage in compact surface-mount form factors. Ensure system power supplies align with the specified voltage range and that thermal management accommodates the industrial temperature limits. Validate pinout compatibility during PCB layout integration.

Memory IC Part Context

This component belongs to the Micron MT29F series of NAND flash memories, designed for high-density data storage needs. The LBGA package offers a compact footprint suitable for space-constrained electronic designs while maintaining robust electrical performance standards typical of modern non-volatile memory solutions.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Micron resources for potential obsolescence management strategies or equivalent product recommendations.