MT29F512G08CUCABH3-12ITZ:A TR

Memory IC Overview

The MT29F512G08CUCABH3-12ITZ:A is a 512Gb NAND flash memory integrated circuit manufactured by Micron Technology Inc. It utilizes Multi-Level Cell (MLC) technology and features an 8-bit parallel interface with a memory organization of 64G x 8. The device operates within a supply voltage range of 2.7V to 3.6V and supports a clock frequency of 83 MHz. It is housed in a 100-LBGA package measuring 12x18 mm, designed for surface mount installation. The component functions reliably across an ambient temperature range of 0°C to 70°C.

Memory IC Feature Summary

• High-density non-volatile storage utilizing MLC NAND technology
• Parallel interface architecture supporting 8-bit data bus width
• Surface-mount BGA packaging for compact board integration

Memory IC Applications

• Embedded storage systems requiring high-capacity data retention
• Industrial equipment with standard operating temperature requirements
• Consumer electronics devices utilizing parallel NAND interfaces

Memory IC Procurement Notes

Verify the specific suffix and ordering code against official Micron documentation to ensure compatibility with required package and electrical specifications. Confirm current product status as distribution listings may indicate obsolete or end-of-life conditions. Cross-reference datasheet revisions to validate timing parameters and pin configurations before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a 512Gb capacity with parallel interface is required for space-constrained applications. Ensure system power supplies remain within the 2.7V to 3.6V operational range. Verify that the host controller supports the 83 MHz clock frequency and 100-pin BGA footprint. Consider thermal management capabilities if operating near the upper limit of the specified temperature range.

Memory IC Part Context

This part belongs to the Micron MT29F series of NAND flash memories, which are engineered for high-performance data storage solutions. The series typically offers various densities and interface options to accommodate diverse embedded design needs. The 512Gb density represents a significant storage tier within the portfolio, suitable for applications demanding substantial non-volatile memory resources.