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MT29F512G08EBLKEJ4-M:K is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 512GBIT PAR 132VBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MT29F512G08EBLKEJ4-M:K
- Description：IC FLASH 512GBIT PAR 132VBGA
- Series：-
- Mfr：Micron Technology Inc.
- Package：Tray
- Memory Type：-
- Memory Format：FLASH
- Technology：-
- Memory Size：512Gbit
- Memory Organization：64G x 8
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MT29F512G08EBLKEJ4-M:K
Memory IC Overview
The MT29F512G08EBLKEJ4-M:K is a 512 Gbit NAND Flash memory device manufactured by Micron Technology Inc. It utilizes Triple-Level Cell (TLC) technology and features a 64 G x 8 memory organization with an 8-bit data bus width. The component is housed in a VBGA-132 package and operates within a voltage range of 2.35V to 3.6V.
Memory IC Feature Summary
- High-density storage utilizing Triple-Level Cell architecture for increased capacity per die.
Memory IC Applications
- Mobile devices requiring high-capacity storage
- Solid-state drives
- Embedded systems
Memory IC Procurement Notes
Verify the specific suffix and package type against official Micron documentation to ensure compatibility with your design requirements. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly. Check for any recent product change notices or end-of-life announcements directly from the manufacturer.
Memory IC Selection Notes
Select this component when a 512 Gbit capacity with an 8-bit parallel interface is required. Ensure the system supports the 2.35V to 3.6V operating voltage range. Verify that the PCB layout accommodates the VBGA-132 package dimensions and thermal requirements specified in the datasheet.
Memory IC Part Context
This part belongs to Micron's NAND Flash portfolio, designed for applications needing significant non-volatile storage in a compact form factor. The 512 Gbit density represents a high-capacity option within the series, suitable for modern consumer electronics and industrial embedded solutions.
Memory IC Replacement Considerations
Consult Micron's official substitution guide for verified alternatives. Generic cross-references may not match the specific TLC characteristics or electrical parameters of this exact part number.
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