Memory IC MT29F64G08CBABAWP:B product image

MT29F64G08CBABAWP:B

  • Description:IC FLASH 64GBIT PAR 48TSOP I
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Bulk

SKU:2e4d1f3c1df5 Category: Brand:

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MT29F64G08CBABAWP:B is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 64GBIT PAR 48TSOP I. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT29F64G08CBABAWP:B

  • Description:IC FLASH 64GBIT PAR 48TSOP I
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Bulk
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND
  • Memory Size:64Gbit
  • Memory Organization:8G x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:48-TSOP I
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT29F64G08CBABAWP:B

MT29F64G08CBABAWP:B

Memory IC Overview

The MT29F64G08CBABAWP:B is a 64 Gbit NAND flash memory device manufactured by Micron Technology. It utilizes multiple-level cell (MLC) technology and features an asynchronous parallel interface compliant with ONFI 2.2 standards. The device is organized as 8 G x 8 bits, providing a page size of 8640 bytes and a block size of 256 pages. It operates within a voltage range of 2.7 V to 3.6 V for both VCC and VCCQ, with a maximum active read current of 50 mA. The component is housed in a 48-pin TSOP package and supports an industrial operating temperature range from 0°C to +70°C.

Memory IC Feature Summary

  • Supports Open NAND Flash Interface (ONFI) 2.2 standard for interoperability
  • Utilizes MLC technology for high-density data storage
  • Features asynchronous I/O performance up to timing mode 5
  • Includes two planes with 2048 blocks per plane

Memory IC Applications

  • Portable consumer electronics requiring non-volatile storage
  • Industrial control systems needing reliable data retention
  • Embedded applications utilizing parallel NAND interfaces

Memory IC Procurement Notes

Verify the specific suffix 'B TR' indicates tape and reel packaging configuration. Confirm RoHS compliance status through official documentation. Check moisture sensitivity level requirements for handling procedures. Validate lead-free status against current environmental regulations. Ensure compatibility with existing system power supplies within the specified voltage range.

Memory IC Selection Notes

Select this component when an asynchronous parallel interface is required for 64 Gbit capacity. Consider the 48-TSOP package constraints for PCB layout. Evaluate the 0°C to +70°C temperature range against environmental conditions. Compare ONFI 2.2 compatibility with controller specifications. Assess power consumption limits against system battery or supply capabilities.

Memory IC Part Context

This part belongs to the Micron MT29F series of NAND flash memories. It shares architectural similarities with other devices in the family, such as the MT29F128G and MT29F256G, differing primarily in density and specific pin configurations. The asynchronous variant offers flexibility in timing compared to synchronous counterparts.

Memory IC Replacement Considerations

Direct substitutes include MT29F64G08CBAA[A/B] variants with compatible pinouts. Verify functional equivalence regarding ONFI version support. Check for identical package dimensions and electrical characteristics before integration.

MT29F64G08CBABAWP:BMT29F64G08CBABAWP:B

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