MT29F64G08CBABBWP-12IT:B

Memory IC Overview

The MT29F64G08CBABBWP-12IT:B is a 64 Gbit Multi-Level Cell (MLC) NAND flash memory device manufactured by Micron Technology. It features an asynchronous parallel interface with an 8-bit data bus width and an organization of 8 Gigabit x 8. The component operates within a voltage range of 2.7 V to 3.6 V for both VCC and VCCQ, supporting a maximum active read current of 50 mA. Designed for commercial temperature environments, it functions between 0°C and +70°C. The device is housed in a 48-pin Thin Small Outline Package (TSOP), suitable for surface-mount assembly.

Memory IC Feature Summary

• Supports Open NAND Flash Interface (ONFI) 2.3 specifications for interoperability
• Utilizes MLC technology for high-density data storage
• Provides asynchronous I/O performance up to timing mode 5
• Includes advanced command set compliant with ONFI NAND Flash Protocol

Memory IC Applications

• Portable media players
• Digital cameras
• Consumer electronics devices
• Embedded storage systems

Memory IC Procurement Notes

Verify the specific suffix '12IT' against official Micron documentation to confirm the exact temperature grade and package variant, as standard listings may vary. Confirm RoHS compliance status directly with the manufacturer or authorized distributor prior to procurement. Ensure that the asynchronous timing requirements align with the target system controller capabilities. Validate supply chain authenticity through authorized channels to prevent counterfeit components.

Memory IC Selection Notes

Select this component when a cost-effective, high-density non-volatile storage solution is required for consumer applications. The asynchronous interface simplifies design integration compared to synchronous alternatives. Ensure the host system supports the 8-bit parallel data bus width and provides the necessary 2.7V to 3.6V power rails. Consider the commercial temperature range limits if the application environment exceeds 70°C.

Memory IC Part Context

This part belongs to the Micron MT29F series of NAND flash memories, which are designed for general-purpose storage applications. The series offers various densities and interfaces, including both asynchronous and synchronous options. The MT29F64G08CBABBWP-12IT:B specifically targets the 64 Gbit capacity segment using MLC technology, balancing performance and cost for mass-market electronic devices.

Memory IC Replacement Considerations

Direct pin-to-pin replacements within the same density and interface type should be verified against Micron's official substitution guides. Cross-referencing with other Micron parts sharing the ONFI 2.3 compatibility and TSOP-48 package is recommended. Ensure any substitute maintains the same voltage and timing specifications.