Memory IC MT41J256M16HA-107:E TR product image

MT41J256M16HA-107:E TR

$4.02
  • Description:IC DRAM 4GBIT PAR 96FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)

SKU:6259b5e44575 Category: Brand:

  
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MT41J256M16HA-107:E TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 4GBIT PAR 96FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT41J256M16HA-107:E TR

  • Description:IC DRAM 4GBIT PAR 96FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - DDR3
  • Memory Size:4Gbit
  • Memory Organization:256M x 16
  • Memory Interface:Parallel
  • Clock Frequency:933 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.425V ~ 1.575V
  • Operating Temperature:0°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:96-TFBGA
  • Supplier Device Package:96-FBGA (9x14)
  • Access Time:20 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT41J256M16HA-107:E TR

MT41J256M16HA-107:E TR

Memory IC Overview

The MT41J256M16HA-107:E TR is a 4Gbit DDR3 SDRAM organized as 256 Meg x 16 with eight internal banks. It operates at VDD = VDDQ = 1.5V ±0.075V and supports a maximum data rate of 2133 MT/s. The device features a reduced tFAW specification of 30ns for a 2KB page size, compared to the standard 35ns. Key timing parameters include tRCD, tRP, and CL all set to 14 (13.09ns) at this speed grade. It utilizes a 96-ball FBGA package.

Memory IC Feature Summary

  • Reduced four ACTIVATE window time (tFAW) of 30ns for 2KB page sizes
  • Supports selectable burst chop (BC4) or fixed burst length (BL8) on-the-fly
  • Features nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Includes write leveling, multipurpose register, and output driver calibration capabilities

Memory IC Applications

  • High-performance computing systems requiring optimized refresh windows
  • Graphics processing units utilizing 2KB page sizes
  • Embedded memory solutions compatible with standard DDR3 interfaces

Memory IC Procurement Notes

Verify the specific ordering suffix against official Micron documentation to confirm package type and revision status. Ensure compatibility with system voltage requirements of 1.5V. Confirm that the reduced tFAW specification aligns with the target application's memory controller capabilities and timing constraints.

Memory IC Selection Notes

Select this component when a 4Gbit capacity with a 16-bit interface is required. The reduced tFAW feature offers performance benefits for workloads involving frequent activations within 2KB pages. Ensure the design supports the specified 1.5V operating voltage and accommodates the 96-ball FBGA footprint.

Memory IC Part Context

This part belongs to the Micron MT41J256M16 series of 4Gb DDR3 SDRAMs. It represents a specialized variant featuring an addendum for reduced tFAW timing. The 'HA' marking indicates the 96-ball FBGA package configuration, while 'E' denotes the silicon revision.

Memory IC Replacement Considerations

Standard DDR3-2133 devices with a 35ns tFAW may function but will not provide the same refresh optimization. Verify pinout compatibility with the 96-ball FBGA package before substitution.

MT41J256M16HA-107:E TRMT41J256M16HA-107:E TR
$4.02
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