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MT41J256M16HA-107:E TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 4GBIT PAR 96FBGA. Review the specifications below when checking this part for your BOM.
The MT41J256M16HA-107:E TR is a 4Gbit DDR3 SDRAM organized as 256 Meg x 16 with eight internal banks. It operates at VDD = VDDQ = 1.5V ±0.075V and supports a maximum data rate of 2133 MT/s. The device features a reduced tFAW specification of 30ns for a 2KB page size, compared to the standard 35ns. Key timing parameters include tRCD, tRP, and CL all set to 14 (13.09ns) at this speed grade. It utilizes a 96-ball FBGA package.
Verify the specific ordering suffix against official Micron documentation to confirm package type and revision status. Ensure compatibility with system voltage requirements of 1.5V. Confirm that the reduced tFAW specification aligns with the target application's memory controller capabilities and timing constraints.
Select this component when a 4Gbit capacity with a 16-bit interface is required. The reduced tFAW feature offers performance benefits for workloads involving frequent activations within 2KB pages. Ensure the design supports the specified 1.5V operating voltage and accommodates the 96-ball FBGA footprint.
This part belongs to the Micron MT41J256M16 series of 4Gb DDR3 SDRAMs. It represents a specialized variant featuring an addendum for reduced tFAW timing. The 'HA' marking indicates the 96-ball FBGA package configuration, while 'E' denotes the silicon revision.
Standard DDR3-2133 devices with a 35ns tFAW may function but will not provide the same refresh optimization. Verify pinout compatibility with the 96-ball FBGA package before substitution.
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