Memory IC MT41K2G4SN-125:A TR product image

MT41K2G4SN-125:A TR

  • Description:IC DRAM 8GBIT PARALLEL 78FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)

SKU:b7e08a7c2e35 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MT41K2G4SN-125:A TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 8GBIT PARALLEL 78FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT41K2G4SN-125:A TR

  • Description:IC DRAM 8GBIT PARALLEL 78FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - DDR3L
  • Memory Size:8Gbit
  • Memory Organization:2G x 4
  • Memory Interface:Parallel
  • Clock Frequency:800 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.283V ~ 1.45V
  • Operating Temperature:0°C ~ 95°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:78-TFBGA
  • Supplier Device Package:78-FBGA (9x13.2)
  • Access Time:13.5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT41K2G4SN-125:A TR

MT41K2G4SN-125:A TR

Memory IC Overview

The Micron MT41K2G4SN-125:A TR is an 8Gb TwinDie DDR3L SDRAM component with a 128 Meg x 4 organization and two ranks. It operates at a maximum clock frequency of 800 MHz (1600 MT/s) with a CAS latency of 11. The device supports a supply voltage range of 1.283V to 1.45V, ensuring backward compatibility with 1.5V systems. It utilizes a 78-ball FBGA package measuring 8mm by 10.5mm and functions within a commercial temperature range of 0°C to 95°C.

Memory IC Feature Summary

  • TwinDie architecture integrating two independent 4Gb DDR3L dies into a single package for enhanced density
  • Dual-rank configuration featuring separate chip select, ODT, and CKE signals for each rank
  • Low-voltage operation at 1.35V with full backward compatibility to standard 1.5V DDR3 environments

Memory IC Applications

  • High-density mobile computing platforms requiring low power consumption
  • Embedded industrial control systems operating in commercial temperature ranges
  • Network infrastructure equipment utilizing dual-rank memory architectures

Memory IC Procurement Notes

Verify the specific die revision suffix 'N' against design requirements, as thermal impedance values differ from previous revisions. Confirm that the system board layout accommodates the 8mm by 10.5mm package dimensions. Ensure the manufacturing date code aligns with project lifecycle expectations before finalizing orders.

Memory IC Selection Notes

Select this part when a high-density 8Gb solution is required within a compact footprint. The dual-rank structure allows for independent bank operations across both internal dies. Verify that the host controller supports the necessary differential data strobes and on-die termination configurations for the x4 bus width.

Memory IC Part Context

This component belongs to Micron's TwinDie DDR3L family, which combines two monolithic dies to achieve higher capacity without increasing the physical package size significantly. It serves as a direct density upgrade over standard 4Gb parts while maintaining pin compatibility with existing DDR3L designs.

Memory IC Replacement Considerations

MT41K2G4RKB-125:P TR

Memory IC FAQ

How does the TwinDie architecture affect refresh rates?

Each of the two internal ranks contains eight banks. When the case temperature exceeds 85°C, the refresh rate must be doubled to maintain data integrity according to JEDEC specifications.

What is the function of the ZQ balls in this package?

The ZQ0 and ZQ1 balls serve as external reference points for output drive calibration. They must be tied to an external resistor connected to VSSQ to ensure proper signal integrity.

MT41K2G4SN-125:A TRMT41K2G4SN-125:A TR

Click on the inquiry