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MT41K2G4SN-125:A TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 8GBIT PARALLEL 78FBGA. Review the specifications below when checking this part for your BOM.
The Micron MT41K2G4SN-125:A TR is an 8Gb TwinDie DDR3L SDRAM component with a 128 Meg x 4 organization and two ranks. It operates at a maximum clock frequency of 800 MHz (1600 MT/s) with a CAS latency of 11. The device supports a supply voltage range of 1.283V to 1.45V, ensuring backward compatibility with 1.5V systems. It utilizes a 78-ball FBGA package measuring 8mm by 10.5mm and functions within a commercial temperature range of 0°C to 95°C.
Verify the specific die revision suffix 'N' against design requirements, as thermal impedance values differ from previous revisions. Confirm that the system board layout accommodates the 8mm by 10.5mm package dimensions. Ensure the manufacturing date code aligns with project lifecycle expectations before finalizing orders.
Select this part when a high-density 8Gb solution is required within a compact footprint. The dual-rank structure allows for independent bank operations across both internal dies. Verify that the host controller supports the necessary differential data strobes and on-die termination configurations for the x4 bus width.
This component belongs to Micron's TwinDie DDR3L family, which combines two monolithic dies to achieve higher capacity without increasing the physical package size significantly. It serves as a direct density upgrade over standard 4Gb parts while maintaining pin compatibility with existing DDR3L designs.
MT41K2G4RKB-125:P TR
Each of the two internal ranks contains eight banks. When the case temperature exceeds 85°C, the refresh rate must be doubled to maintain data integrity according to JEDEC specifications.
The ZQ0 and ZQ1 balls serve as external reference points for output drive calibration. They must be tied to an external resistor connected to VSSQ to ensure proper signal integrity.
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