MT44K16M36RB-107E:B TR

Memory IC Overview

The MT44K16M36RB-107E:B is a 576Mb RLDRAM 3 component with a 16 Meg x 36 organization and 16 internal banks. It operates at a maximum clock frequency of 1066 MHz, delivering a peak bandwidth of 76.8 Gb/s. The device utilizes a 168-ball BGA package and supports a reduced cycle time (tRC) of 8ns with a clock cycle (tCK) of 1.07ns. Electrical requirements include a 1.2V center-terminated push/pull I/O, a 1.35V VDD supply, and a 1.2V VDDQ supply.

Memory IC Feature Summary

• Supports differential input clocks and free-running differential data clocks for high-speed operation.
• Features integrated on-die termination (ODT) and output driver calibration capabilities.
• Includes a READ training register to assist in signal integrity optimization.
• Provides programmable read/write latency and burst length configurations.

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure systems
• Industrial automation control units

Memory IC Procurement Notes

Verify the specific speed bin and revision level against current Micron catalogs before procurement. Confirm that the ordering suffix matches the required tCK and tRC timing specifications. Ensure compatibility with the system's power delivery network regarding the distinct VDD and VDDQ voltage requirements.

Memory IC Selection Notes

Select this component when a high-bandwidth memory solution with low latency is required. The 16 Meg x 36 configuration suits applications needing wide data paths. Verify that the host controller supports RLDRAM 3 protocols and differential clocking schemes. Consider thermal management due to the dense 168-ball BGA packaging.

Memory IC Part Context

This part belongs to the Micron RLDRAM 3 family, designed for high-speed parallel memory interfaces. It shares architectural similarities with other devices in the series but offers a specific 16 Meg x 36 density. The technology targets applications requiring deterministic latency and high throughput beyond standard DRAM capabilities.

Memory IC Replacement Considerations

Consult official Micron documentation for verified substitute part numbers within the RLDRAM 3 portfolio. Ensure any replacement maintains identical pinout, voltage levels, and timing parameters.

Memory IC FAQ

What are the specific voltage requirements for the MT44K16M36RB-107E:B?

The device requires a 1.35V supply for VDD and a 1.2V supply for VDDQ, utilizing 1.2V center-terminated push/pull I/O.

Does this component support multiplexed addressing?

Yes, the datasheet confirms that the component supports both multiplexed and non-multiplexed addressing capabilities.