Memory IC MT44K16M36RB-125F:A product image

MT44K16M36RB-125F:A

  • Description:IC DRAM 576MBIT PARALLEL 168BGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:f53c439d047a Category: Brand:

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MT44K16M36RB-125F:A is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 576MBIT PARALLEL 168BGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT44K16M36RB-125F:A

  • Description:IC DRAM 576MBIT PARALLEL 168BGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:DRAM
  • Memory Size:576Mbit
  • Memory Organization:16M x 36
  • Memory Interface:Parallel
  • Clock Frequency:800 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.28V ~ 1.42V
  • Operating Temperature:0°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:168-TBGA
  • Supplier Device Package:168-BGA (13.5x13.5)
  • Access Time:8 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT44K16M36RB-125F:A

MT44K16M36RB-125F:A

Memory IC Overview

The Micron MT44K16M36RB-125F:A is a 576 Mbit RLDRAM 3 device featuring a 16 Meg x 36 organization with 16 banks. It operates at a maximum clock frequency of 800 MHz (1.25 ns cycle time) and supports a peak bandwidth of 76.8 Gb/s. The component utilizes a 168-ball FBGA package, accepts 1.35V VDD and 1.2V VDDQ, and functions within an industrial temperature range of -40°C to +95°C.

Memory IC Feature Summary

  • Supports 1066 Mb/s/ball data rate operation with differential input clocks and free-running differential data clocks.
  • Features integrated on-die termination (ODT), programmable read/write latency, and a READ training register for signal integrity.
  • Includes a JTAG interface compliant with IEEE 1149.1-2001 for boundary scan testing and control.

Memory IC Applications

  • High-performance networking equipment
  • Telecommunications infrastructure systems
  • Industrial automation controllers

Memory IC Procurement Notes

Verify the specific speed bin (-125F) and industrial temperature rating (IT) against system requirements. Confirm that the 168-ball FBGA footprint matches the PCB layout. Ensure power supply sequencing aligns with the initialization protocol specified in the datasheet.

Memory IC Selection Notes

Select this part for designs requiring high bandwidth and low latency memory solutions. The 16 Meg x 36 configuration suits applications needing wide data buses. Verify compatibility with the host controller's support for RLDRAM 3 protocols and differential signaling.

Memory IC Part Context

This component belongs to the Micron RLDRAM 3 family, designed for high-speed parallel memory applications. It complements other devices like the MT44K32M18 by offering a wider data bus width in a similar package form factor, targeting performance-critical embedded systems.

Memory IC Replacement Considerations

Direct substitutes include other Micron RLDRAM 3 parts such as the MT44K16M36RB-125E:A or MT44K16M36RB-125:A, provided the timing parameters and temperature ratings are compatible with the design.

Memory IC FAQ

What is the minimum refresh cycle time for this device?

The device requires a 64ms refresh period, consisting of 128K refresh cycles per 64ms interval.

Does this part support multiplexed addressing?

Yes, the MT44K16M36RB-125F:A supports both multiplexed and non-multiplexed addressing capabilities.

MT44K16M36RB-125F:AMT44K16M36RB-125F:A

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