Memory IC MT44K32M18RB-125E:A product image

MT44K32M18RB-125E:A

  • Description:IC DRAM 576MBIT PARALLEL 168BGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:327f4811ba66 Category: Brand:

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MT44K32M18RB-125E:A is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 576MBIT PARALLEL 168BGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT44K32M18RB-125E:A

  • Description:IC DRAM 576MBIT PARALLEL 168BGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:DRAM
  • Memory Size:576Mbit
  • Memory Organization:32M x 18
  • Memory Interface:Parallel
  • Clock Frequency:800 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.28V ~ 1.42V
  • Operating Temperature:0°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:168-TBGA
  • Supplier Device Package:168-BGA (13.5x13.5)
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT44K32M18RB-125E:A

MT44K32M18RB-125E:A

Memory IC Overview

The Micron MT44K32M18RB-125E:A is a 576Mb RLDRAM 3 component with a 32 Meg x 18 organization and 16 banks. It operates at a clock frequency of 800 MHz (tCK = 1.25ns) with a minimum cycle time (tRC) of 8ns, supporting a peak bandwidth of 76.8 Gb/s. The device utilizes a 168-ball Pb-free FBGA package and features 1.2V center-terminated push/pull I/O. It supports extended operating ranges from 200 to 1066 MHz and includes integrated on-die termination.

Memory IC Feature Summary

  • Supports differential input clocks and free-running differential data clocks for high-speed operation.
  • Includes an on-die DLL to generate edge-aligned data and differential output clock signals.
  • Features programmable read/write latency and burst length configurations via mode registers.
  • Provides integrated on-die termination and output driver calibration capabilities.

Memory IC Applications

  • High-performance networking equipment
  • Telecommunications infrastructure systems
  • Enterprise storage controllers

Memory IC Procurement Notes

Verify the specific speed bin and temperature grade against the official Micron catalog before procurement. Confirm that the -125E suffix aligns with the required 800 MHz clock frequency and 8ns tRC timing specifications. Ensure the 168-ball FBGA package matches the target PCB footprint design constraints.

Memory IC Selection Notes

Select this part when a 576Mb capacity with a 18-bit data width is required for memory-intensive applications. Consider the 16-bank architecture for improved concurrency compared to lower-density alternatives. Verify compatibility with system voltage requirements, specifically the 1.35V VDD and 1.2V VDDQ levels.

Memory IC Part Context

This component belongs to the Micron MT44K series of RLDRAM 3 devices. It shares architectural similarities with the MT44K16M36 variant but differs in organization and data bus width. Both variants utilize the same 168-ball FBGA package form factor within the broader RLDRAM 3 family.

Memory IC Replacement Considerations

Consult the official Micron product catalog for verified substitutes. Cross-reference speed bins and package types to ensure functional equivalence without redesigning the host board layout or electrical interface.

Memory IC FAQ

What is the minimum cycle time for the -125E speed bin?

The minimum cycle time (tRC) for the -125E speed bin is 8ns.

Does this device support multiplexed addressing?

Yes, the device supports both multiplexed and non-multiplexed addressing capabilities.

MT44K32M18RB-125E:AMT44K32M18RB-125E:A

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