Memory IC MT46H256M32L4JV-6 WT:B product image

MT46H256M32L4JV-6 WT:B

  • Description:IC DRAM 8GBIT PARALLEL 168VFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:28a64c79d497 Category: Brand:

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MT46H256M32L4JV-6 WT:B is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 8GBIT PARALLEL 168VFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT46H256M32L4JV-6 WT:B

  • Description:IC DRAM 8GBIT PARALLEL 168VFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR
  • Memory Size:8Gbit
  • Memory Organization:256M x 32
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 1.95V
  • Operating Temperature:-25°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:168-VFBGA
  • Supplier Device Package:168-VFBGA (12x12)
  • Access Time:5 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT46H256M32L4JV-6 WT:B

MT46H256M32L4JV-6 WT:B

Memory IC Overview

Micron Technology MT46H256M32L4JV-6 WT:B is a Mobile Low-Power DDR SDRAM IC with an 8Gb capacity (256M x 32). It operates at a clock rate of 166 MHz with a cycle time of 6ns and access time of 5.0ns. The device uses a 168-ball VFBGA package measuring 12mm x 12mm. Supply voltage ranges from 1.70V to 1.95V for both VDD and VDDQ. It supports four internal banks, differential clock inputs, and bidirectional data strobes. Operating temperature range is -25°C to +85°C.

Memory IC Feature Summary

  • Internal pipelined double data rate architecture enabling two data accesses per clock cycle
  • Four internal banks allowing concurrent operation
  • Bidirectional data strobe per byte of data with edge-aligned reads and center-aligned writes
  • Supports partial-array self refresh and deep power-down modes

Memory IC Applications

  • Wireless communication devices
  • Mobile handheld electronics
  • Portable computing systems

Memory IC Procurement Notes

Verify the specific ordering suffixes against official Micron documentation to confirm package type, speed grade, and temperature range. Ensure compatibility with system voltage requirements and interface signals before integration. Cross-reference part markings using the manufacturer decoder tool.

Memory IC Selection Notes

Select this component for designs requiring high-density mobile memory with low power consumption. The wireless temperature rating suits environments with moderate thermal variations. Confirm that the 166 MHz speed grade meets the target system bandwidth requirements.

Memory IC Part Context

This part belongs to the Micron Mobile LPDDR family, designed for portable applications. It utilizes standard JEDEC addressing within the L4 configuration variant. The device integrates advanced power management features typical of the series to extend battery life in mobile platforms.

Memory IC Replacement Considerations

Compatible substitutes include other Micron Mobile LPDDR parts with matching density and package dimensions. Verify electrical parameters and timing specifications to ensure functional equivalence.

MT46H256M32L4JV-6 WT:BMT46H256M32L4JV-6 WT:B

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