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MT46H8M32LFB5-75 IT:A TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 256MBIT PAR 90VFBGA. Review the specifications below when checking this part for your BOM.
The MT46H8M32LFB5-75 IT:A TR is a Mobile Low-Power DDR SDRAM with a density of 256Mb, organized as 2 Meg x 32 across four internal banks. It operates at VDD/VDDQ voltages between 1.70V and 1.95V. The -75 suffix indicates a cycle time (tCK) of 7.5ns at CAS Latency 3, supporting a maximum clock frequency of 133MHz. The device utilizes a 90-ball VFBGA package measuring 8mm by 13mm. The IT designation specifies an industrial operating temperature range from -40°C to +85°C.
Verify the specific ordering suffixes against official Micron documentation to confirm package dimensions, timing grades, and temperature ranges. Ensure the 'TR' suffix requirement aligns with tape-and-reel handling specifications. Confirm RoHS compliance status and lead-free material declarations prior to integration into manufacturing processes.
Select this component when designing mobile or industrial applications requiring high-density memory within a compact footprint. The 90-ball VFBGA package suits space-constrained layouts. The industrial temperature rating ensures reliability in harsh environments. Verify system voltage compatibility with the 1.70V to 1.95V operating range before finalizing the design.
This part belongs to the Micron Mobile LPDDR SDRAM family, designed for battery-powered portable devices. It succeeds earlier DDR generations by offering lower voltage operation and enhanced power-saving features like Deep Power-Down. The 256Mb density provides sufficient storage for modern mobile operating systems and application data.
Compatible substitutes include other Micron Mobile LPDDR parts with matching 256Mb density, 32-bit width, and 90-ball VFBGA packaging. Ensure replacement parts share the same -75 timing grade and IT industrial temperature rating for direct pin-to-pin functionality without circuit redesign.
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