MT46V256M4P-6T:A

Memory IC Overview

The MT46V256M4P-6T:A is a 1Gb DDR SDRAM component manufactured by Micron Technology. It features a density of 64 Meg x 4 organized into four internal banks. The device utilizes a 66-pin TSOP package with lead-free construction (suffix P). Operating at a cycle time of 6.0ns with a CAS latency of 2.5, it supports data rates up to DDR333B. Power supply requirements are VDD and VDDQ at +2.5V ±0.2V. The part includes differential clock inputs, bidirectional data strobes, and programmable burst lengths.

Memory IC Feature Summary

• Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle
• Four internal banks allowing for concurrent operation to hide row access and precharge times
• Source-synchronous data capture using bidirectional data strobes aligned with read and write data
• Supports auto refresh and self refresh modes for power management

Memory IC Applications

• High-speed data buffering in computer systems
• Graphics memory applications requiring high bandwidth
• Embedded systems utilizing DDR interface standards

Memory IC Procurement Notes

Verify the specific speed grade marking -6T corresponds to the required 6.0ns cycle time and CL=2.5 latency for your system design. Confirm the Pb-free package suffix P matches environmental compliance requirements. Ensure voltage levels align with the specified +2.5V ±0.2V for both VDD and VDDQ. Check that the 66-pin TSOP footprint matches your PCB layout constraints.

Memory IC Selection Notes

Select this component when a 1Gb capacity with a x4 data width is required. The -6T speed grade is suitable for systems operating at DDR333B frequencies. Consider the TSOP package if board space allows for longer leads compared to BGA options. Verify compatibility with SSTL_2 I/O standards for signal integrity.

Memory IC Part Context

This part belongs to the Micron 1Gb DDR SDRAM family, which also includes x8 and x16 configurations. The MT46V256M4 variant specifically provides the narrowest data bus option within this density class. It shares architectural features such as DLL alignment and mode register settings with other members of the series.

Memory IC Replacement Considerations

Compatible substitutes include other Micron parts from the same 1Gb DDR family, such as MT46V128M8 or MT46V64M16, provided the data width and pinout differences are accommodated. Cross-vendor replacements require careful verification of timing parameters and electrical characteristics.