Memory IC MT47H128M8CF-3 IT:H product image

MT47H128M8CF-3 IT:H

  • Description:IC DRAM 1GBIT PARALLEL 60FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:ba7cb761c5da Category: Brand:

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MT47H128M8CF-3 IT:H is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 1GBIT PARALLEL 60FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT47H128M8CF-3 IT:H

  • Description:IC DRAM 1GBIT PARALLEL 60FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - DDR2
  • Memory Size:1Gbit
  • Memory Organization:128M x 8
  • Memory Interface:Parallel
  • Clock Frequency:333 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 95°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:60-TFBGA
  • Supplier Device Package:60-FBGA (8x10)
  • Access Time:450 ps
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT47H128M8CF-3 IT:H

MT47H128M8CF-3 IT:H

Memory IC Overview

The MT47H128M8CF-3 IT:H is a 1 Gbit DDR2 SDRAM manufactured by Micron Technology. It features an organization of 16 Meg x 8 with eight internal banks, housed in a 60-ball FBGA package. The device operates at a nominal voltage of 1.8V ±0.1V for both VDD and VDDQ, supporting JEDEC-standard SSTL_18 I/O levels. It utilizes a 4n-bit prefetch architecture and supports selectable burst lengths of 4 or 8. The component includes on-die termination (ODT) and a DLL to align data transitions. It is rated for industrial temperature operation ranging from 0°C to +85°C.

Memory IC Feature Summary

  • Eight internal banks enable concurrent operations for improved throughput.
  • On-die termination (ODT) reduces signal reflections and power consumption.
  • DLL aligns DQ and DQS transitions with the clock signal CK.
  • Supports differential data strobe (DQS/DQS#) and duplicate output strobe (RDQS).

Memory IC Applications

  • Industrial control systems requiring wide operating temperature ranges.
  • Embedded memory solutions for consumer electronics.
  • General-purpose high-speed data buffering in computing devices.

Memory IC Procurement Notes

Verify the specific suffix IT:H confirms industrial temperature grade (-40°C to +85°C or 0°C to +85°C per datasheet) and Rev H package dimensions. Confirm RoHS compliance status as listed in official documentation. Check for end-of-life status or alternative sourcing if production availability is limited. Ensure compatibility with host controller SSTL_18 signaling requirements.

Memory IC Selection Notes

Select this part for applications requiring 1 Gbit density in a compact 60-ball FBGA form factor. The industrial temperature rating makes it suitable for harsh environments where commercial grade parts may fail. Consider the 1.8V supply requirement and ensure power delivery networks support the specified current loads. Verify that the host system supports DDR2 timing parameters and CAS latencies compatible with this device speed bin.

Memory IC Part Context

This component belongs to the Micron MT47H128M8 family of 1 Gbit DDR2 SDRAMs. It shares architectural similarities with other variants in the series, differing primarily in temperature range, package revision, and speed grades. The 16 Meg x 8 configuration provides a balanced interface width for many embedded applications. It is distinct from wider bus variants like the x16 version which uses an 84-ball package.

Memory IC Replacement Considerations

Consult Micron datasheets for direct pin-compatible substitutes within the MT47H128M8 family. Verify that any replacement maintains the same 60-ball FBGA footprint and electrical characteristics. Cross-reference speed grades and temperature ratings to ensure environmental suitability.

MT47H128M8CF-3 IT:HMT47H128M8CF-3 IT:H

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