MT47H256M4CF-3 IT:H

Memory IC Overview

The MT47H256M4CF-3IT:H is a DDR2 SDRAM component manufactured by Micron Technology. It features a density of 32 Meg x 4 with 8 internal banks, operating at a voltage of VDD = +1.8V ±0.1V and VDDQ = +1.8V ±0.1V. The device supports JEDEC-standard 1.8V I/O compatible with SSTL_18. Key architectural features include a 4n-bit prefetch architecture, differential data strobe (DQS, DQS#) option, and a DLL to align DQ and DQS transitions with the clock signal. It offers programmable CAS latency (CL), posted CAS additive latency (AL), and selectable burst lengths of 4 or 8.

Memory IC Feature Summary

• Supports concurrent operation through eight internal banks
• Includes differential data strobe and duplicate output strobe options for precise timing alignment
• Features on-die termination and adjustable data-output drive strength

Memory IC Applications

• High-performance computing systems requiring low-latency memory access
• Industrial equipment utilizing industrial temperature grade components
• Automotive electronic control units requiring automotive temperature grade reliability

Memory IC Procurement Notes

Verify the specific suffix IT:H against official Micron documentation to confirm the exact temperature range and RoHS compliance status. Ensure the ordering information matches the required package type and speed grade. Cross-reference the part number with the latest datasheet revision to avoid discrepancies in electrical characteristics or pin assignments during procurement.

Memory IC Selection Notes

Select this component when a 128Mb capacity DDR2 SDRAM with a x4 organization is required. Consider the 3E speed grade if the system design demands specific timing parameters associated with that performance tier. Evaluate the need for industrial or automotive temperature ratings based on the operational environment constraints of the target application.

Memory IC Part Context

This part belongs to the Micron MT47H256M4 family of DDR2 SDRAMs. The family includes variants such as MT47H256M4CF-187EAT and MT47H256M4CF-25AT. These devices share common architectural features like the 4n-bit prefetch and 1.8V operation but differ in speed grades, temperature ranges, and specific packaging options defined by their suffixes.

Memory IC Replacement Considerations

Compatible substitutes within the same family include MT47H256M4CF-187EIT and MT47H256M4CF-25AT. Verify that any replacement part maintains the same x4 organization, 1.8V supply requirements, and compatible speed grade to ensure functional equivalence without redesigning the host circuit.