MT47H64M16NF-25E XIT:M TR

Memory IC Overview

The Micron MT47H64M16NF-25E XIT:M TR is a DDR2 SDRAM component with a 1 Gbit capacity and 16-bit data bus width. It operates at a maximum clock frequency of 400 MHz within a voltage range of 1.7 V to 1.9 V. The device features a 64 M x 16 organization, 84-pin FBGA package, and 400 ps access time. It supports industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

• Supports differential data strobe (DQS) for signal integrity
• Includes on-die termination (ODT) for impedance matching
• Features eight internal banks for concurrent operations

Memory IC Applications

• Embedded systems requiring high-density memory
• Industrial control equipment
• Networking infrastructure components

Memory IC Procurement Notes

Verify the specific suffix configuration against official Micron documentation to ensure compatibility with system requirements. Confirm current lifecycle status as availability may vary by region. Validate environmental compliance certifications prior to integration into final assemblies.

Memory IC Selection Notes

Select this part for applications requiring 1.8V DDR2 performance in industrial environments. Ensure PCB layout supports differential signaling if DQS is utilized. Verify power supply stability within the specified 1.7V to 1.9V range to maintain signal integrity and operational reliability.

Memory IC Part Context

This component belongs to the Micron MT47H series of DDR2 SDRAM devices. It provides high-speed parallel data transfer capabilities suitable for demanding computing tasks. The technology utilizes a 4n-bit prefetch architecture to achieve efficient bandwidth utilization.

Memory IC Replacement Considerations

Consult official Micron substitution guides for verified alternatives. Cross-reference pinouts and electrical specifications before replacing.