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MT48H16M16LFBF-75 IT:H is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 256MBIT PAR 54VFBGA. Review the specifications below when checking this part for your BOM.
The MT48H16M16LFBF-75 IT:H is a 256Mb Mobile Low-Power SDR SDRAM configured as 4 Meg x 16 with four internal banks. It operates at VDD/VDDQ of 1.7–1.95V with an industrial temperature range of –40°C to +85°C. The -75 speed grade specifies a 7.5ns cycle time and 133MHz clock rate at CAS latency 3. It utilizes a 54-ball VFBGA package (8mm x 9mm) and features LVTTL-compatible I/O, programmable burst lengths, auto precharge, partial-array self refresh, deep power-down, and selectable output drive strength.
Verify the specific ordering suffixes against official Micron documentation to ensure correct configuration. Confirm that the IT designation matches the required industrial temperature range and that the BF package code aligns with the PCB footprint. Cross-reference the revision letter H with the latest datasheet to validate any functional updates or errata before finalizing procurement specifications.
Select this component when an industrial temperature rating is mandatory for mobile applications. Ensure the host controller supports the 7.5ns cycle time and 133MHz maximum frequency. Verify that the 54-ball VFBGA package dimensions fit within the mechanical constraints of the target device design.
This part belongs to Micron's 256Mb Mobile LPSDR family, designed for high-density, low-power mobile applications. It shares architectural similarities with other variants in the series but is distinct due to its specific x16 configuration, industrial temperature rating, and 54-ball packaging format.
Consult official Micron substitution guides for verified equivalents. Generic cross-references are not supported without explicit manufacturer confirmation of pinout and electrical compatibility.
It controls the self-refresh rate to maintain data integrity while optimizing power consumption under varying thermal conditions.
It minimizes current consumption when all banks are idle by disabling most internal circuits until the CKE signal reactivates the device.
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