Memory IC MT48H8M16LFB4-8 IT:J TR product image

MT48H8M16LFB4-8 IT:J TR

  • Description:IC DRAM 128MBIT PAR 54VFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)

SKU:939160be9da0 Category: Brand:

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MT48H8M16LFB4-8 IT:J TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 128MBIT PAR 54VFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT48H8M16LFB4-8 IT:J TR

  • Description:IC DRAM 128MBIT PAR 54VFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPSDR
  • Memory Size:128Mbit
  • Memory Organization:8M x 16
  • Memory Interface:Parallel
  • Clock Frequency:125 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:54-VFBGA
  • Supplier Device Package:54-VFBGA (8x8)
  • Access Time:7 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT48H8M16LFB4-8 IT:J TR

MT48H8M16LFB4-8 IT:J TR

Memory IC Overview

The Micron MT48H8M16LFB4-8 IT:J TR is a 128Mb Mobile SDRAM configured as 8 Meg x 16 with four internal banks. It operates at VDD/VDDQ of 1.70–1.95V and supports clock frequencies up to 133 MHz (cycle time 7.5ns) or 125 MHz (cycle time 8ns). The device features an 8mm x 8mm 54-ball VFBGA package, industrial temperature range (-40°C to +85°C), and die revision J.

Memory IC Feature Summary

  • Fully synchronous interface with all signals registered on the positive edge of the system clock
  • Internal pipelined architecture allowing column address changes every clock cycle for high-speed random access
  • Temperature-compensated self-refresh mode utilizing an on-chip temperature sensor
  • Partial-array self-refresh capability for reduced power consumption during standby

Memory IC Applications

  • Mobile communication devices requiring low-power memory
  • Portable consumer electronics with industrial temperature requirements
  • Embedded systems utilizing quad-bank DRAM interleaving
  • Battery-operated applications leveraging deep power-down modes

Memory IC Procurement Notes

Verify the specific speed grade suffix matches the required cycle time, as -8 denotes 8ns/125MHz while -75 denotes 7.5ns/133MHz. Confirm the IT designation aligns with industrial operating temperatures. Ensure the TR suffix corresponds to tape-and-reel packaging requirements for automated assembly processes.

Memory IC Selection Notes

Select this component when a 128Mb density with a 16-bit data bus width is required in a compact 54-ball VFBGA footprint. The industrial temperature rating makes it suitable for harsh environments. Consider the available CAS latencies and programmable burst lengths to match system timing constraints.

Memory IC Part Context

This part belongs to the Micron MT48H8M16LF family of 128Mb Mobile SDRAMs. It shares architectural similarities with other variants in the series but differs in speed grade, temperature rating, and physical package dimensions. The family utilizes a common pinout and command set for design flexibility across different performance tiers.

Memory IC Replacement Considerations

Direct substitutes include other Micron parts within the MT48H8M16LF series with matching speed grades and packages. Cross-vendor replacements require verification of pin compatibility, voltage levels, and timing parameters to ensure functional equivalence in the target application.

MT48H8M16LFB4-8 IT:J TRMT48H8M16LFB4-8 IT:J TR

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