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MT48H8M32LFB5-75:G TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 256MBIT PAR 90VFBGA. Review the specifications below when checking this part for your BOM.
The Micron MT48H8M32LFB5-75:G TR is a 256Mb Mobile SDRAM configured as 8 Meg x 32 with four internal banks. It operates at VDD/VDDQ of 1.70–1.95V and supports a clock rate of 133 MHz with an access time of 6ns. The device utilizes a 90-ball VFBGA package (8mm x 13mm) and features LVTTL-compatible I/O. Key specifications include programmable burst lengths, auto precharge, partial-array self refresh, and deep power-down modes.
Verify the component matches the specific 90-ball VFBGA package dimensions and lead-free construction indicated by the suffix. Confirm the speed grade corresponds to the required 133 MHz operational frequency and 6ns access time. Ensure the ordering suffix aligns with the desired industrial or commercial temperature range and power consumption profile before finalizing acquisition.
Select this part when a 32-bit data bus width is required within a compact mobile form factor. The 90-ball VFBGA package offers a smaller footprint compared to larger BGA options while maintaining high-density storage. Consider the low voltage requirements and power-saving features like deep power-down for battery-operated applications where energy efficiency is critical.
This component belongs to the Micron 256Mb Mobile SDRAM family, designed specifically for space-constrained portable electronics. It shares architectural similarities with other variants in the series but differs in organization and package type. The 8 Meg x 32 configuration provides a balanced trade-off between bandwidth and density for mobile applications.
Consult official Micron documentation for verified cross-references. No direct substitute part numbers are confirmed in the provided source material.
The device supports multiple power-saving modes including Deep Power-Down (DPD), Auto Power-Down, and Self Refresh, which significantly reduce current draw when the memory is not actively accessed.
The on-chip temperature sensor monitors the internal temperature of the device to automatically adjust the refresh rate, ensuring data integrity while optimizing power usage under varying thermal conditions.
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