MT48H8M32LFF5-8

Memory IC Overview

The Micron MT48H8M32LFF5-8 is a 256Mb Mobile SDRAM configured as 8 Meg x 32. It operates at 1.8V with a cycle time of 8ns and supports CAS latencies of 2 or 3. The device features four internal banks, programmable burst lengths, and LVTTL-compatible I/Os in a 90-ball VFBGA package.

Memory IC Feature Summary

• Fully synchronous interface with internal pipelined architecture for high-speed random access
• Quad-bank organization enabling concurrent operations to hide row access cycles
• Low voltage power supply options including deep power-down and partial array self refresh modes

Memory IC Applications

• Mobile handheld devices requiring low power consumption
• Portable computing systems utilizing mobile memory architectures
• Embedded applications needing compact surface mount memory solutions

Memory IC Procurement Notes

Verify the specific speed grade suffix matches system timing requirements. Confirm the 1.8V operating voltage aligns with target platform specifications. Ensure the 90-ball VFBGA footprint corresponds to the design layout. Check for lead-free compliance if required by regional regulations.

Memory IC Selection Notes

Select this component for designs prioritizing low power efficiency and small form factors. The 1.8V variant suits battery-operated environments. Verify that the host controller supports the required CAS latency and burst length configurations for optimal performance integration.

Memory IC Part Context

This part belongs to the Micron Mobile SDRAM family designed for portable electronics. It offers a balance of density and power efficiency compared to standard desktop SDRAMs. The 256Mb capacity provides sufficient storage for embedded firmware and data buffering in compact devices.

Memory IC Replacement Considerations

Compatible substitutes include MT48LC8M32LFF5-75 and MT48LC8M32LFF5-10 from the same series. These variants share identical pinouts and functionality but differ in maximum clock frequency and cycle time specifications.