Memory IC MT49H16M18SJ-25 IT:B product image

MT49H16M18SJ-25 IT:B

  • Description:IC DRAM 288MBIT PARALLEL 144FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:24936f774e14 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MT49H16M18SJ-25 IT:B is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 288MBIT PARALLEL 144FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT49H16M18SJ-25 IT:B

  • Description:IC DRAM 288MBIT PARALLEL 144FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:DRAM
  • Memory Size:288Mbit
  • Memory Organization:16M x 18
  • Memory Interface:Parallel
  • Clock Frequency:400 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:144-TFBGA
  • Supplier Device Package:144-FBGA (18.5x11)
  • Access Time:20 ns

Memory IC datasheet and documents for MT49H16M18SJ-25 IT:B

MT49H16M18SJ-25 IT:B

Memory IC Overview

The Micron MT49H16M18SJ-25 IT:B is a 288Mb CIO RLDRAM 2 component with a 16 Meg x 18 organization and eight internal banks. It operates at a 533 MHz clock frequency (2.5ns cycle time) within the commercial to industrial temperature range of -40°C to +95°C. The device utilizes a 144-ball FBGA package, supports HSTL I/O levels, and features programmable read latency and burst lengths for optimized data bus utilization.

Memory IC Feature Summary

  • Eight-bank architecture enabling concurrent operations and maximum bandwidth
  • SRAM-type interface with differential input clocks and on-die DLL
  • Programmable READ/WRITE latencies and burst sequence lengths
  • Data mask capability for WRITE commands to optimize bus efficiency

Memory IC Applications

  • Telecommunications systems requiring high-bandwidth storage
  • Networking infrastructure equipment
  • Cache applications demanding fast random access

Memory IC Procurement Notes

Verify the specific suffix 'IT' confirms the industrial temperature rating (-40°C to +95°C). Confirm the 'SJ' suffix indicates the 144-ball FBGA package type. Ensure the '-25' speed grade matches the required 2.5ns cycle time for your design. Check current availability status directly with Micron as this component may be subject to discontinuation notices.

Memory IC Selection Notes

Select this part when an SRAM-like interface with reduced latency is required for high-speed data processing. The eight-bank structure allows for interleaved operations to sustain peak bandwidth. Verify that the system power supply can support the specified 2.5V core and 1.5V/1.8V I/O requirements. Ensure the PCB layout accommodates the 144-ball FBGA footprint and differential clock routing.

Memory IC Part Context

This component belongs to the Micron RLDRAM 2 family, designed for high-density, high-bandwidth memory solutions. It serves as a successor to earlier RLDRAM generations, offering improved performance through a nonmultiplexed address interface option and balanced read/write latencies. The 288Mb density provides a compact solution for bandwidth-intensive embedded applications.

Memory IC Replacement Considerations

Consult Micron's official cross-reference tools for verified substitutes. Consider the MT49H16M18BM-25E:B for Pb-free µBGA packaging or other speed grades like -18 or -33 if timing requirements differ. Verify pin compatibility and electrical specifications before substitution.

MT49H16M18SJ-25 IT:BMT49H16M18SJ-25 IT:B

Click on the inquiry