MT49H32M18CFM-25:B TR

Memory IC Overview

The Micron MT49H32M18CFM-25:B TR is a 576Mb (32M x 18) RLDRAM II parallel DRAM IC. It operates at a clock frequency of 400 MHz with a 15 ns access time. The device uses a 144-TFBGA package and requires a 1.7V to 1.9V supply voltage. It supports an operating temperature range from 0°C to 95°C.

Memory IC Feature Summary

• Supports high-speed parallel data transfer via SRAM-type interface
• Features programmable read latency and row cycle time for optimized bus utilization
• Includes differential input clocks and data mask capabilities for write commands

Memory IC Applications

• High-performance networking equipment
• Telecommunications infrastructure systems
• Enterprise storage controllers

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging, distinct from tray options. Confirm the 'CFM' variant specifications against official Micron documentation to ensure compatibility with target system requirements before procurement.

Memory IC Selection Notes

Select this component for designs requiring high bandwidth memory solutions. Ensure the host controller supports RLDRAM II protocols and the 144-pin TFBGA footprint. Verify power supply stability within the 1.7V to 1.9V range for reliable operation.

Memory IC Part Context

This part belongs to the Micron MT49H series of Reduced Latency DRAM devices. These components are engineered for applications demanding low latency and high throughput, serving as critical memory elements in complex digital signal processing and data routing architectures.

Memory IC Replacement Considerations

Consult official Micron substitution guides for compatible alternatives. Verify pinout and electrical parameter alignment with existing designs when considering cross-model replacements.