MT49H64M9FM-25E:B

Memory IC Overview

The Micron MT49H64M9FM-25E:B is a CIO RLDRAM 2 device with a 64 Meg x 9 organization and 8 banks. It operates at a maximum clock frequency of 533 MHz, delivering a peak bandwidth of 38.4 Gb/s. The part features a reduced cycle time of 15ns and utilizes a nonmultiplexed address interface. Power requirements include 2.5V VEXT, 1.8V VDD, and 1.5V or 1.8V VDDQ. It is housed in a 144-ball μBGA FM package and supports commercial operating temperatures from 0°C to +95°C.

Memory IC Feature Summary

• Supports 533 MHz DDR operation with balanced read and write latencies for optimized data bus utilization.
• Features an SRAM-type interface with programmable read latency, row cycle time, and burst sequence length.
• Includes differential input clocks and on-die DLL for edge-aligned data generation.
• Provides data mask functionality for write commands and on-die termination options.

Memory IC Applications

• High bandwidth data storage
• Telecommunications systems
• Networking equipment
• Cache applications

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm availability and exact specifications. Confirm that the FM package designation matches the required board layout constraints. Ensure compatibility with the system's voltage levels and temperature range before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when high-speed sustainable operation is required for networking or telecommunications. The 8-bank architecture supports concurrent operations. Verify that the design accommodates the 144-ball μBGA package dimensions and the specific power supply requirements for core and I/O voltages.

Memory IC Part Context

This device belongs to the Micron RLDRAM 2 family, designed for high-performance memory applications. It shares architectural similarities with other parts in the series but differs in organization and package type. The technology focuses on reducing cycle times while maintaining high data transfer rates through advanced interface techniques.

Memory IC Replacement Considerations

Consult the official Micron product catalog for verified substitute part numbers. Cross-reference speed grades and package types to ensure functional equivalence. Do not assume interchangeability with other DRAM technologies without verifying electrical and timing parameters.

Memory IC FAQ

What is the refresh requirement for the MT49H64M9FM-25E:B?

The device requires a total of 128K refresh commands issued every 32ms, distributed across its 8 banks with 16K refreshes per bank.

How is the burst length configured?

The burst length is programmable via the mode register and can be set to 2, 4, or 8.