ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
MT53D1024M64D8NW-053 WT ES:D TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 64GBIT 1.866GHZ 432VFBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MT53D1024M64D8NW-053 WT ES:D TR
- Description：IC DRAM 64GBIT 1.866GHZ 432VFBGA
- Series：-
- Mfr：Micron Technology Inc.
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：DRAM
- Technology：SDRAM - Mobile LPDDR4
- Memory Size：64Gbit
- Memory Organization：1G x 64
- Memory Interface：-
- Clock Frequency：1.866 GHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：1.1V
- Operating Temperature：-30°C ~ 85°C (TC)
- Mounting Type：Surface Mount
- Package / Case：432-VFBGA
- Supplier Device Package：432-VFBGA (15x15)
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MT53D1024M64D8NW-053 WT ES:D TR
Memory IC Overview
The Micron MT53D1024M64D8NW-053 WT ES:D TR is a Mobile LPDDR4 DRAM IC with a 64 Gbit capacity and 1G x 64 organization. It operates at a maximum clock frequency of 1.866 GHz and supports a 1.1 V supply voltage. The component utilizes a 432-ball VFBGA package (15x15 mm) for surface mount installation. It functions within an operating temperature range of -30°C to +85°C, providing high-speed volatile memory storage for mobile and embedded systems.
Memory IC Feature Summary
- Supports LPDDR4 interface for high-bandwidth data transfer in mobile environments
- Optimized for low power consumption through advanced dynamic random access memory technology
- Designed for compact form factors using a fine-pitch ball grid array package
Memory IC Applications
- Smartphones and tablets requiring high-density mobile memory
- Embedded computing systems needing fast volatile data storage
- Portable electronic devices utilizing LPDDR4 standards
Memory IC Procurement Notes
Verify the exact suffix configuration against official Micron documentation to ensure compatibility with specific design requirements. Confirm availability status as distribution channels may vary. Ensure proper handling procedures are followed due to the sensitive nature of semiconductor components during assembly and testing phases.
Memory IC Selection Notes
Select this component when designing systems that require 64 Gbit density with LPDDR4 speed capabilities. Consider the 432-ball VFBGA footprint for PCB layout constraints. Evaluate thermal management needs given the operational temperature range and power specifications inherent to mobile DRAM applications.
Memory IC Part Context
This part belongs to the Micron MT53D series of Mobile LPDDR4 DRAMs. These components are engineered to meet industry standards for high-performance mobile memory solutions. The series offers scalable capacities and interfaces suitable for next-generation portable electronics and embedded computing platforms requiring efficient data processing.
Memory IC Replacement Considerations
Consult Micron's official substitution guide for compatible alternatives. Verify pinout and electrical parameter compatibility before replacing. Cross-reference with other MT53D variants offering similar density and interface speeds.
Explore related parts through Memory, Integrated Circuits (ICs), all product categories, ChipApex homepage.
