Memory IC MT53D512M32D2DS-046 AAT:D TR product image

MT53D512M32D2DS-046 AAT:D TR

$16.47
  • Description:IC DRAM 16GBIT 2.133GHZ 200WFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)

SKU:7ff76a9473a3 Category: Brand:

  
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MT53D512M32D2DS-046 AAT:D TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 16GBIT 2.133GHZ 200WFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT53D512M32D2DS-046 AAT:D TR

  • Description:IC DRAM 16GBIT 2.133GHZ 200WFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR4
  • Memory Size:16Gbit
  • Memory Organization:512M x 32
  • Memory Interface:-
  • Clock Frequency:2.133 GHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.1V
  • Operating Temperature:-40°C ~ 105°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:200-WFBGA
  • Supplier Device Package:200-WFBGA (10x14.5)
  • Grade:Automotive
  • Qualification:AEC-Q100

Memory IC datasheet and documents for MT53D512M32D2DS-046 AAT:D TR

MT53D512M32D2DS-046 AAT:D TR

Memory IC Overview

The Micron MT53D512M32D2DS-046 AAT:D TR is a mobile LPDDR4 SDRAM component with a total storage capacity of 16 Gbit. It features a data bus width of 32 bits and an organization of 512 M x 32. The device supports a maximum clock frequency of 2.133 GHz. It operates within a voltage range up to 1.1 V and functions in temperatures from -40°C to +105°C. The part is housed in a WFBGA-200 package and belongs to the 110S series.

Memory IC Feature Summary

  • Supports low power operation through ultra-low voltage core and I/O power specifications.
  • Utilizes a 16n prefetch DDR architecture for efficient data transfer.
  • Features eight internal banks per channel to enable concurrent operations.

Memory IC Applications

  • Mobile computing platforms requiring high bandwidth memory
  • Smartphones and tablets utilizing LPDDR4 standards
  • Embedded systems needing compact DRAM solutions

Memory IC Procurement Notes

Verify current manufacturing status directly with Micron Technology, as lifecycle information may be incomplete or subject to change. Confirm that the specific ordering suffix matches the required electrical and thermal specifications for your design. Ensure compliance with RoHS directives and moisture sensitivity levels before integration into production workflows.

Memory IC Selection Notes

Select this component when a 16 Gbit density with a 32-bit interface is required for mobile applications. The 2.133 GHz speed grade suits high-performance mobile devices. Verify that the WFBGA-200 footprint aligns with the PCB layout constraints and that the industrial temperature range meets the operational environment requirements.

Memory IC Part Context

This part belongs to Micron's LPDDR4 SDRAM family designed for mobile electronics. It offers higher data rates and lower power consumption compared to previous generations like LPDDR3. The 110S series designation indicates specific performance characteristics tailored for modern smartphone and tablet architectures demanding efficient memory usage.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Micron official resources for qualified alternatives if discontinuation occurs.

MT53D512M32D2DS-046 AAT:D TRMT53D512M32D2DS-046 AAT:D TR
$16.47
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