Memory IC MT53D768M64D8NZ-046 WT ES:E product image

MT53D768M64D8NZ-046 WT ES:E

$130.95
  • Description:IC DRAM 48GBIT 2.133GHZ 376WFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:2146180e86a5 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MT53D768M64D8NZ-046 WT ES:E is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 48GBIT 2.133GHZ 376WFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT53D768M64D8NZ-046 WT ES:E

  • Description:IC DRAM 48GBIT 2.133GHZ 376WFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR4
  • Memory Size:48Gbit
  • Memory Organization:768M x 64
  • Memory Interface:-
  • Clock Frequency:2.133 GHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.1V
  • Operating Temperature:-30°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:376-WFBGA
  • Supplier Device Package:376-WFBGA (14x14)
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MT53D768M64D8NZ-046 WT ES:E

MT53D768M64D8NZ-046 WT ES:E

Memory IC Overview

The MT53D768M64D8NZ-046 WT ES:E is a Micron LPDDR4 SDRAM component with a total density of 48 Gbit. It utilizes a 768M x 64-bit organization and features a 200-ball VFBGA package. The device supports a core clock frequency of 2133 MHz, achieving a single-pin data rate of 4266 Mbps. Operating voltages include 1.8V for VDD1 and 1.1V for VDD2/VDDQ. It operates within a commercial temperature range of -25°C to +85°C.

Memory IC Feature Summary

  • Supports high-speed LPDDR4 interface with 4266 Mbps data rates
  • Features low power consumption design with multiple power modes
  • Includes programmable CAS latency and burst length options
  • Offers partial array self-refresh capability for power optimization

Memory IC Applications

  • Mobile computing platforms requiring high bandwidth
  • Industrial control systems with embedded memory needs
  • Automotive infotainment and telematics units
  • High-end embedded systems and IoT gateways

Memory IC Procurement Notes

Verify the specific suffix 'ES:E' against official Micron documentation to confirm exact binning or quality grade. Confirm lead times and availability directly with authorized distributors as supply status may vary. Ensure compatibility with system voltage requirements and thermal constraints before procurement.

Memory IC Selection Notes

Select this part for applications requiring 48 Gbit capacity in a compact 200-ball form factor. Consider the 4266 Mbps speed for high-bandwidth mobile or industrial use cases. Verify that the system supports LPDDR4 signaling standards and appropriate power management circuits for 1.8V and 1.1V rails.

Memory IC Part Context

This component belongs to the Micron MT53D series of LPDDR4 DRAM devices. It is designed for mobile and embedded applications demanding high performance and energy efficiency. The series typically offers various densities and pin configurations to suit different system integration requirements.

Memory IC Replacement Considerations

Consult Micron's official cross-reference tools for verified substitutes. Ensure any replacement matches the 200-ball VFBGA footprint, 48 Gbit density, and LPDDR4 electrical specifications.

MT53D768M64D8NZ-046 WT ES:EMT53D768M64D8NZ-046 WT ES:E
$130.95
Buy Now