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MT53D768M64D8NZ-046 WT ES:E is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 48GBIT 2.133GHZ 376WFBGA. Review the specifications below when checking this part for your BOM.
The MT53D768M64D8NZ-046 WT ES:E is a Micron LPDDR4 SDRAM component with a total density of 48 Gbit. It utilizes a 768M x 64-bit organization and features a 200-ball VFBGA package. The device supports a core clock frequency of 2133 MHz, achieving a single-pin data rate of 4266 Mbps. Operating voltages include 1.8V for VDD1 and 1.1V for VDD2/VDDQ. It operates within a commercial temperature range of -25°C to +85°C.
Verify the specific suffix 'ES:E' against official Micron documentation to confirm exact binning or quality grade. Confirm lead times and availability directly with authorized distributors as supply status may vary. Ensure compatibility with system voltage requirements and thermal constraints before procurement.
Select this part for applications requiring 48 Gbit capacity in a compact 200-ball form factor. Consider the 4266 Mbps speed for high-bandwidth mobile or industrial use cases. Verify that the system supports LPDDR4 signaling standards and appropriate power management circuits for 1.8V and 1.1V rails.
This component belongs to the Micron MT53D series of LPDDR4 DRAM devices. It is designed for mobile and embedded applications demanding high performance and energy efficiency. The series typically offers various densities and pin configurations to suit different system integration requirements.
Consult Micron's official cross-reference tools for verified substitutes. Ensure any replacement matches the 200-ball VFBGA footprint, 48 Gbit density, and LPDDR4 electrical specifications.
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