MT53D768M64D8SQ-046 WT ES:E TR

Memory IC Overview

The MT53D768M64D8SQ-046 WT ES:E TR is a Micron LPDDR4 dynamic random-access memory component. It features a storage capacity of 48 Gbit organized as 768 Meg x 64 bits. The device utilizes a VFBGA-200 package with eight data pads (8DP). This specific part number variant includes the 'ES' designation, indicating it is an Engineering Sample intended for evaluation purposes rather than mass production.

Memory IC Feature Summary

• LPDDR4 architecture optimized for mobile and embedded applications
• High-density 48 Gbit storage configuration
• VFBGA-200 surface-mount packaging

Memory IC Applications

• Mobile device prototyping
• Embedded system development
• Hardware engineering validation

Memory IC Procurement Notes

This item is identified as an Engineering Sample (ES) and may not be available through standard commercial distribution channels. Verify availability directly with Micron Technology or authorized distributors. Confirm that the ES status meets project requirements, as these units are typically restricted to evaluation and testing phases only.

Memory IC Selection Notes

Select this component specifically for hardware design verification and early-stage development cycles. Ensure compatibility with LPDDR4 controllers and verify that the VFBGA-200 footprint matches the PCB layout. Note that final production quantities require ordering non-ES variants with confirmed mass-production status.

Memory IC Part Context

This component belongs to the Micron MT53D series of LPDDR4 DRAMs. The suffix 'WT' denotes the temperature range, while 'E' indicates the speed grade. The 'TR' suffix specifies tape-and-reel packaging. The 'ES' prefix distinguishes this unit from standard production inventory, marking it for pre-release technical assessment.