Memory IC MT53E1G32D2FW-046 AAT:C TR product image

MT53E1G32D2FW-046 AAT:C TR

$27.90
  • Description:IC DRAM 32GBIT PAR 200TFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)

SKU:085046f48036 Category: Brand:

  
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MT53E1G32D2FW-046 AAT:C TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC DRAM 32GBIT PAR 200TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT53E1G32D2FW-046 AAT:C TR

  • Description:IC DRAM 32GBIT PAR 200TFBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR4X
  • Memory Size:32Gbit
  • Memory Organization:1G x 32
  • Memory Interface:Parallel
  • Clock Frequency:2.133 GHz
  • Write Cycle Time - Word, Page:18ns
  • Voltage - Supply:1.06V ~ 1.17V
  • Operating Temperature:-40°C ~ 105°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:200-TFBGA
  • Supplier Device Package:200-TFBGA (10x14.5)
  • Access Time:3.5 ns
  • Grade:Automotive
  • Qualification:AEC-Q100

Memory IC datasheet and documents for MT53E1G32D2FW-046 AAT:C TR

MT53E1G32D2FW-046 AAT:C TR

Memory IC Overview

The Micron MT53E1G32D2FW-046 AAT:C TR is a mobile LPDDR4X SDRAM integrated circuit with a total storage capacity of 32 Gbit. It features a 32-bit data bus width and operates at a maximum clock frequency of 2.133 GHz. The device utilizes a 200-TFBGA package measuring 10x14.5 mm. Electrical specifications include an access time of 3.5 ns and a supply voltage range of 1.06 V to 1.17 V. It supports an operating temperature range from -40°C to +95°C and holds AEC-Q100 automotive qualification.

Memory IC Feature Summary

  • LPDDR4X technology for high-bandwidth mobile applications
  • AEC-Q100 qualified for automotive reliability standards
  • Parallel interface architecture for system integration

Memory IC Applications

  • Automotive infotainment systems
  • Advanced driver-assistance systems (ADAS)
  • Mobile computing platforms requiring automotive-grade memory

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging configuration against official Micron documentation. Confirm that the 'AAT:C' grade corresponds to the required automotive temperature and performance specifications for your design. Ensure compatibility with the 200-TFBGA footprint during PCB layout validation.

Memory IC Selection Notes

Select this component when automotive-grade certification is mandatory for mobile DRAM requirements. The 32 Gbit density and 32-bit width suit high-performance processing tasks. Verify that the 2.133 GHz speed meets system bandwidth needs and that the TFBGA package fits within mechanical constraints.

Memory IC Part Context

This part belongs to the Micron MT53E series of mobile LPDDR4X memories. It is designed for demanding environments requiring robust data handling. The automotive qualification distinguishes it from standard commercial mobile memory variants, ensuring longevity and stability in vehicle electronics.

Memory IC Replacement Considerations

Micron MT53E1G32D2FW-046 AAT:B TR

Memory IC FAQ

What is the maximum operating temperature for this automotive-grade memory?

The maximum junction temperature is specified as +95°C.

Does this component support parallel interface operations?

Yes, the device utilizes a parallel memory interface architecture.

MT53E1G32D2FW-046 AAT:C TRMT53E1G32D2FW-046 AAT:C TR
$27.90
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