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MT54V512H18EF-6 is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC SRAM 9MBIT HSTL 165FBGA. Review the specifications below when checking this part for your BOM.
The MT54V512H18EF-6 is a QDR II SRAM with a density of 512K x 18 bits, totaling 9Mb. It operates at a maximum clock frequency of 166 MHz and features a 0.5 ns access time. The device utilizes a 165-ball FBGA package measuring 13 mm by 15 mm with a 1 mm pitch. It supports double data rate operation on both read and write ports using separate independent data buses.
Verify the specific suffix EF-6 against official Micron documentation to confirm voltage levels and package variations. Confirm RoHS compliance status as some listings indicate non-compliance. Check for end-of-life notifications or discontinuation notices prior to procurement to ensure long-term supply availability.
Select this component when a 9Mb capacity with 18-bit width is required for high-speed synchronous memory applications. Ensure the design supports 1.8V HSTL I/O standards and accommodates the 165-ball FBGA footprint. Verify that the system architecture can utilize the dual-port concurrent transaction capability for optimal performance.
This part belongs to the Micron QDR II SRAM family, which includes variants such as the MT54W512H36BF-6. These devices are designed for high-performance embedded memory applications requiring fast clock-to-data times and precise timing control through dedicated input and output clocks.
The MT54W512H36BF-6 offers similar QDR II specifications but provides a 36-bit data width instead of 18 bits. Designers must verify pin compatibility and address mapping differences before substituting parts within the QDR II family.
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