MT58L128V32P1T-7.5

Memory IC Overview

The MT58L128V32P1T-7.5 is a 4Mbit (128K x 32) synchronous static random-access memory (SRAM) manufactured by Micron Technology Inc. It operates at a maximum clock frequency of 133 MHz with a cycle time of 4 ns. The device features parallel interface access and is housed in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x20.1 mm.

Memory IC Feature Summary

• Synchronous operation supporting high-speed data transfer via clocked interface
• High-density 4Mbit storage capacity organized as 128K words by 32 bits
• Compact 100-pin TQFP package design for space-constrained applications

Memory IC Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial control systems utilizing parallel SRAM interfaces

Memory IC Procurement Notes

Verify the specific suffix '7.5' against the official Micron datasheet to confirm voltage levels and temperature ranges. Ensure the 100-TQFP footprint matches your PCB layout constraints. Confirm lead-free status if required by regulatory standards. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

Memory IC Selection Notes

Select this component when synchronous parallel SRAM performance is required over asynchronous alternatives. The 133 MHz speed rating suits applications demanding rapid data access. Consider the 100-pin package size relative to available board space. Evaluate power consumption specifications against system thermal limits before finalizing the design choice.

Memory IC Part Context

This part belongs to Micron's standard SRAM portfolio, designed for general-purpose high-speed memory applications. It complements other Micron memory solutions by providing fast, volatile storage for microprocessors and digital signal processors in embedded environments.

Memory IC Replacement Considerations

Consult Micron documentation for direct pin-compatible substitutes within the same family. Verify electrical parameters such as voltage and timing against potential replacements to ensure functional equivalence without circuit redesign.