MT58L64L32FT-10

Memory IC Overview

The MT58L64L32FT-10 is a Synchronous Burst SRAM manufactured by Samsung Semiconductor, Inc. It features a memory organization of 64K x 32 bits, providing a total capacity of 2 Megabits. The device operates with a single +3.3V power supply and utilizes a 100-pin TQFP package. Its maximum access time is specified at 10 nanoseconds, supporting high-speed data transfer for system applications requiring reliable volatile memory storage.

Memory IC Feature Summary

• Synchronous burst architecture with clock-controlled registered addresses and data I/Os
• Single +3.3V power supply operation with isolated output buffer supply
• Automatic power-down mode designed for portable applications to reduce standby current
• Individual byte write control allowing selective data modification

Memory IC Applications

• Cache memory systems in embedded controllers
• Buffering in telecommunications equipment
• Data storage in industrial automation systems

Memory IC Procurement Notes

Verify the exact suffix 'FT-10' against official Samsung documentation to confirm pinout compatibility and electrical specifications. Ensure the component meets RoHS compliance requirements if applicable to your assembly process. Cross-reference the datasheet revision date to validate feature availability and operational limits before integration into final designs.

Memory IC Selection Notes

Select this component when a synchronous interface is required for precise timing synchronization with microprocessors or DSPs. The 10ns speed grade suits applications needing moderate latency without the complexity of asynchronous logic. Consider the 100-pin TQFP package constraints regarding PCB real estate and thermal dissipation capabilities during the layout phase.

Memory IC Part Context

This part belongs to the Samsung MT58L series of Synchronous Burst SRAMs. These devices are engineered to replace asynchronous SRAMs in high-performance systems by offering pipelined architectures that improve throughput. The series supports various densities and organizations to accommodate different memory bandwidth requirements in computing and communication hardware.

Memory IC Replacement Considerations

Consult Samsung's official substitution guide for verified equivalents. Verify pin-to-pin compatibility and voltage levels before replacing. Generic SRAMs may lack the specific synchronous burst control features required by the original design.