MUN5111DW1T1G

MUN5111DW1T1G

$0.20
  • Description:TRANS PREBIAS 2PNP 50V SC88
  • Series:-

SKU:486460c48fbc Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5111DW1T1G

Overview

The MUN5111DW1T1G is a dual PNP digital transistor from onsemi, housed in an SOT-363-6 surface-mount package. It integrates two PNP transistors with built-in bias resistors, featuring a typical input resistance of 10 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of -100 mA. Power dissipation is rated at 250 mW, with a minimum DC current gain (hFE) of 35. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Integrates dual PNP transistors with built-in bias resistors for simplified circuit design
  • Optimized for low-voltage applications with a 50 V collector-emitter voltage rating
  • Compact SOT-363-6 surface-mount package suitable for space-constrained designs

Applications

  • General-purpose switching circuits
  • Driver applications for LEDs and relays
  • Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required. Ensure the 100 mA current limit and 50 V voltage rating align with the target circuit requirements. Consider the SOT-363-6 footprint constraints during PCB layout. Verify thermal management capabilities given the 250 mW power dissipation rating in the chosen application environment.

Part Context

This part belongs to the MUN5111DW1 series of digital transistors from onsemi. It is designed as a replacement for discrete resistor-transistor networks, reducing component count and board space. The series is commonly used in consumer electronics and industrial control systems where reliable switching is needed.

Replacement Considerations

Check for direct pin-compatible alternatives within the same onsemi family or other manufacturers offering identical electrical characteristics and package dimensions. Ensure any substitute maintains the same PNP polarity, voltage ratings, and internal resistor values.

MUN5111DW1T1GMUN5111DW1T1G
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