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The MUN5111DW1T1G is a dual PNP digital transistor from onsemi, housed in an SOT-363-6 surface-mount package. It integrates two PNP transistors with built-in bias resistors, featuring a typical input resistance of 10 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of -100 mA. Power dissipation is rated at 250 mW, with a minimum DC current gain (hFE) of 35. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a dual PNP configuration with integrated biasing is required. Ensure the 100 mA current limit and 50 V voltage rating align with the target circuit requirements. Consider the SOT-363-6 footprint constraints during PCB layout. Verify thermal management capabilities given the 250 mW power dissipation rating in the chosen application environment.
This part belongs to the MUN5111DW1 series of digital transistors from onsemi. It is designed as a replacement for discrete resistor-transistor networks, reducing component count and board space. The series is commonly used in consumer electronics and industrial control systems where reliable switching is needed.
Check for direct pin-compatible alternatives within the same onsemi family or other manufacturers offering identical electrical characteristics and package dimensions. Ensure any substitute maintains the same PNP polarity, voltage ratings, and internal resistor values.