MUN5112DW1T1G

Overview

The MUN5112DW1T1G is a dual PNP built-in resistor transistor (BRT) manufactured by onsemi. It integrates two PNP transistors with bias resistors in a compact SC-88-6 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of -100 mA. Key electrical parameters include a typical input resistance of 22 kOhms, a minimum DC current gain (hFE) of 60, and a power dissipation rating of 250 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual PNP configuration with integrated bias resistors for simplified circuit design
• Compact SC-88-6 surface-mount packaging for space-constrained applications
• High thermal stability with an operating junction temperature up to 150°C

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Biasing networks in portable electronic devices

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the official manufacturer datasheet prior to procurement. Confirm that the SC-88-6 package dimensions align with the target PCB footprint. Ensure compliance with RoHS directives and check for any recent product change notices that may affect lead times or material composition.

Selection Notes

Select this component when a dual PNP solution with fixed bias resistors is required to reduce external component count. The 22 kOhm input resistance is suitable for standard logic levels. Consider the 250 mW power dissipation limit and ensure adequate thermal management for the SC-88-6 package under continuous load conditions.

Part Context

This part belongs to the MUN5112DW1 series of digital transistors from onsemi. It is designed as a replacement for discrete resistor-transistor networks, offering improved board space efficiency and consistent electrical characteristics compared to hand-assembled discrete solutions.