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The MUN5113DW1T1 is a dual Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates two PNP transistors with monolithic bias resistor networks into a single surface-mount device. The component features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per channel. Each transistor includes an internal base resistor (R1) of 47kΩ and a base-emitter resistor (R2) of 47kΩ. It is housed in the SC-88 package, also known as SOT-363 or SC70-6, which provides a compact footprint for space-constrained designs.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration. The suffix 'T1' indicates a specific tape and reel quantity or variant distinct from other suffixes like 'T3G'. Ensure the selected part matches the required RoHS compliance status and automotive qualification if applicable to the target application environment.
Select this component when a dual PNP BRT configuration is required within a minimal footprint. Compare the integrated 47kΩ/47kΩ resistor values against external bias requirements to ensure proper drive characteristics. Verify that the 50V breakdown voltage and 100mA current rating exceed the maximum operating conditions of the intended circuit load.
This part belongs to the MUN5113 series of dual Bias Resistor Transistors. It shares the same electrical characteristics and pinout as variants such as the MUN5113DW1T3G, differing primarily in packaging quantities and specific manufacturing lot codes. The series is designed to streamline the design process by eliminating external biasing components.
Direct substitutes include the NSVMUN5113DW1T3G and MUN5113DW1T3G. These parts share identical electrical specifications and pin configurations but may differ in packaging type or reel quantity. Verify package compatibility before substitution.