MUN5113DW1T1G

Overview

The MUN5113DW1T1G is a dual PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-363 package. It integrates two PNP transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage of 50 Vdc, continuous collector current of -100 mAdc, and total device dissipation of 250 mW at 25°C when both junctions are heated. The typical input resistance (R1) is 47 kOhms with a ratio of 1.0. DC current gain (hFE) has a minimum value of 80 at 5.0 mA collector current.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to replace discrete components
• Reduces board space and component count through monolithic design
• Simplifies circuit design by eliminating external resistor networks

Applications

• General-purpose switching applications requiring compact digital transistor solutions
• Low power surface mount applications where board space is limited
• Automotive and industrial applications utilizing AEC-Q101 qualified variants

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status for environmental requirements. Check for discontinuation notices or recommended new design alternatives if sourcing for long-term production. Ensure the manufacturer part number matches the exact pinout style required for the PCB footprint.

Selection Notes

Select this component for designs needing dual PNP switching with integrated biasing. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage. Ensure the 100 mA continuous current capability aligns with load requirements. Consider thermal derating curves if operating above 25°C ambient temperature to maintain reliability within specified limits.

Part Context

This device belongs to the MUN5113DW1 series of dual Bias Resistor Transistors. It is functionally related to other BRT families but distinguished by its specific PNP configuration and 47 kOhm resistor values. The SOT-363 package provides a compact solution compared to larger discrete transistor arrangements.

Replacement Considerations

Check for NSBA144EDXV6T1G (SOT-563) or NSBA144EDP6T5G (SOT-963) if different package footprints are acceptable. Verify pin compatibility before substitution as package styles may differ.