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The MUN5114DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It replaces discrete devices and external resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 Vdc, continuous collector current of -100 mAdc, and total device power dissipation of 250 mW at 25°C. The internal resistors are R1 = 10 kΩ and R2 = 47 kΩ. DC current gain is specified as a minimum of 80 at -5.0 mA collector current.
Verify the specific ordering suffix against official documentation to confirm shipping format and compliance status. Confirm RoHS status and lead times directly with authorized distributors or the manufacturer before placing orders. Ensure the part number matches the exact configuration required for the application.
Select this component when a dual PNP digital transistor with a 10 kΩ series base resistor and 47 kΩ base-emitter resistor is needed. Verify that the -50 V collector-emitter voltage and -100 mA current ratings meet the circuit requirements. Consider the SOT-363 package dimensions for PCB layout constraints.
This component belongs to the MUN5111DW1T1 series of Dual Bias Resistor Transistors. The series includes various combinations of NPN and PNP transistors with different internal resistor values, all housed in the SOT-363 package for surface mount applications.
MUN5114DW1T1G is listed as a direct replacement for the MUN5114DW1T1.