MUN5115DW1T1G

MUN5115DW1T1G

  • Description:TRANS PREBIAS 2PNP 50V SC88
  • Series:-

SKU:ed0f58cad87a Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS 2PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5115DW1T1G

Overview

The MUN5115DW1T1G is a dual pre-biased NPN digital transistor array manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors in a compact SOT-363 (SC-88) surface-mount package. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per element. Internal biasing includes a base resistor of 10kΩ and an emitter resistor of 8kΩ, providing a fixed resistance ratio. With a power dissipation rating of 250mW and AEC-Q100 automotive qualification, it supports operation across a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with embedded bias resistors to minimize external component count
  • AEC-Q100 qualified for enhanced reliability in automotive electronic applications
  • Compact SOT-363 packaging designed for high-density surface-mount assembly

Applications

  • Automotive logic switching and interface circuits
  • General-purpose digital buffering and level shifting
  • Battery management system control logic

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and REACH regulations prior to integration. Confirm moisture sensitivity level handling requirements during storage and soldering processes to maintain device integrity.

Selection Notes

Select this component when a dual NPN configuration with fixed internal biasing is required for space-constrained designs. The integrated resistors simplify circuit layout compared to discrete BJT solutions. Verify that the 10kΩ base resistance aligns with the driving source impedance and desired switching speed requirements for the target application.

Part Context

This part belongs to the MUN5115DW1 series of pre-biased transistor arrays. It serves as a specialized variant within onsemi's digital transistor portfolio, optimized for replacing multiple discrete components. The DW1 suffix indicates the specific SC-88/SOT-363 package configuration used in modern compact electronics.

Replacement Considerations

Direct substitutes include other dual NPN pre-biased transistors from onsemi such as SMUN5115DW1T1G or compatible parts from manufacturers like ROHM and Diodes Inc. that match the SOT-363 footprint and electrical characteristics.

MUN5115DW1T1GMUN5115DW1T1G

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