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The MUN5116DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It replaces individual devices and external resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 Vdc, a continuous collector current of -100 mAdc, and a DC current gain (hFE) minimum of 160 at -5.0 mA and -10 V. The device incorporates a series base resistor (R1) of 4.7 kOhms and an open base-emitter resistor (R2). Thermal dissipation reaches 250 mW at 25°C with one junction heated.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and shipping configuration. Confirm that the requested part matches the exact MUN5116DW1T1 designation to avoid receiving variants with different resistor values or package styles. Cross-reference the datasheet revision date during procurement to ensure alignment with current manufacturing specifications.
Select this component when a dual PNP BRT configuration is required within a small footprint. Ensure the application operates within the specified -50 V collector-emitter voltage limit and -100 mA current rating. Verify that the 4.7 kOhm input resistance aligns with the driving circuit requirements. Consider thermal derating curves if operating above 25°C ambient temperature.
This component belongs to the MUN5111DW1T1 series of preferred dual Bias Resistor Transistors manufactured by onsemi. The series offers various combinations of NPN and PNP transistors with different internal resistor ratios housed in the SOT-363 package. This specific model provides a dual PNP configuration optimized for high-gain switching applications.
MUN5116DW1T1G