MUN5116DW1T1

MUN5116DW1T1

$0.05
  • Description:TRANS 2PNP PREBIAS 0.25W SOT363
  • Series:-

SKU:974905912b14 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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MUN5116DW1T1

Overview

The MUN5116DW1T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP silicon transistors integrated with monolithic bias resistor networks in an SOT-363 package. It replaces individual devices and external resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 Vdc, a continuous collector current of -100 mAdc, and a DC current gain (hFE) minimum of 160 at -5.0 mA and -10 V. The device incorporates a series base resistor (R1) of 4.7 kOhms and an open base-emitter resistor (R2). Thermal dissipation reaches 250 mW at 25°C with one junction heated.

Feature Summary

  • Integrates two PNP transistors with monolithic bias resistor networks into a single surface-mount device.
  • Eliminates the need for discrete external biasing components, reducing board space and component count.
  • Designed for low-power applications where board space is limited.

Applications

  • Low-power surface mount applications requiring compact transistor solutions.
  • Circuit designs needing simplified biasing networks for PNP signals.
  • Applications prioritizing reduced component count and board area.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and shipping configuration. Confirm that the requested part matches the exact MUN5116DW1T1 designation to avoid receiving variants with different resistor values or package styles. Cross-reference the datasheet revision date during procurement to ensure alignment with current manufacturing specifications.

Selection Notes

Select this component when a dual PNP BRT configuration is required within a small footprint. Ensure the application operates within the specified -50 V collector-emitter voltage limit and -100 mA current rating. Verify that the 4.7 kOhm input resistance aligns with the driving circuit requirements. Consider thermal derating curves if operating above 25°C ambient temperature.

Part Context

This component belongs to the MUN5111DW1T1 series of preferred dual Bias Resistor Transistors manufactured by onsemi. The series offers various combinations of NPN and PNP transistors with different internal resistor ratios housed in the SOT-363 package. This specific model provides a dual PNP configuration optimized for high-gain switching applications.

Replacement Considerations

MUN5116DW1T1G

MUN5116DW1T1MUN5116DW1T1
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