MUN5116DW1T1G

Overview

The MUN5116DW1T1G is a PNP digital transistor from onsemi, featuring built-in bias resistors within a single SC-70-6 (SOT-363) surface-mount package. It provides a maximum collector-emitter voltage of 50 V and a continuous collector current of -100 mA. The device includes two integrated base resistors, each with a typical value of 47 kOhms. Key electrical parameters include a minimum DC current gain (hFE) of 160 and a power dissipation rating of 250 mW. It operates reliably across a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual PNP transistors with pre-biasing resistors for simplified circuit design.
• Utilizes compact SC-70-6 packaging to minimize printed circuit board footprint.
• Supports high-temperature operation up to 150°C for robust performance.

Applications

• Switching applications in portable consumer electronics
• Driver circuits for low-power loads
• Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for automotive qualification status if required by the target application environment.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required in a minimal footprint. Compare the 47 kOhm resistor values against circuit requirements to ensure proper base drive currents are achieved without excessive power consumption.

Part Context

This part belongs to the MUN51xx series of digital transistors manufactured by onsemi. It serves as a modern replacement for older discrete resistor-transistor networks, offering improved consistency and reduced assembly complexity in compact electronic designs.

Replacement Considerations

MUN5116T1 is listed as a direct substitute, though it utilizes an SC-70-3 package rather than the SC-70-6 form factor. Verify pinout compatibility and thermal characteristics before implementation.