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The MUN5130DW1T1G is a dual PNP digital transistor manufactured by onsemi, housed in an SC-88-6 surface-mount package. It integrates two PNP transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of -100 mA. The device features a typical input resistance of 1 kOhm and a resistor ratio of 1. Minimum DC current gain (hFE) is specified at 3. Power dissipation capacity is 250 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the complete part number including the suffix T1G against official manufacturer documentation to ensure correct configuration and compliance status. Confirm that the SC-88-6 package dimensions match the target PCB footprint requirements. Check for RoHS compliance details in the specific datasheet version. Ensure handling procedures account for the surface-mount nature of the component during assembly processes.
Select this component when a dual PNP configuration with low input resistance is required for switching applications. Compare the 1 kOhm input resistance and 50 V voltage rating against circuit demands. Consider the SC-88-6 package size constraints relative to available board space. Evaluate thermal performance based on the 250 mW power dissipation limit within the intended operating environment.
This part belongs to the MUN5130DW1 series of digital transistors produced by onsemi. It shares the same functional architecture as other members in the family but differs in specific internal resistor values or polarity. The SC-88-6 package is common across various small-signal transistor offerings from the manufacturer, facilitating consistent layout practices for similar component types.