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The onsemi MUN5131DW1T1G is a dual NPN digital transistor housed in a SOT-363 (SC-88) surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device has a typical input resistance of 47 kOhms and a resistor ratio of 1. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a power dissipation rating of 256 mW. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix DW1T1G against official datasheets to confirm pinout and electrical characteristics. Ensure compatibility with SOT-363 footprint requirements during PCB layout. Check for RoHS compliance status if required by project specifications. Confirm availability through authorized distributors as supply chains may vary.
Select this component when a dual NPN configuration with integrated biasing is required in a compact SOT-363 package. The 47 kOhm input resistance suits standard logic interface applications. Consider the 50 V voltage rating and 100 mA current limit for load requirements. Compare with similar MUN series parts if different resistor values are needed.
This part belongs to the MUN51xxDW1 series of dual digital transistors from onsemi. These components are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The SOT-363 package allows for high-density mounting in portable and consumer electronics.
Direct substitutes include other MUN5131 variants from onsemi or equivalent dual NPN digital transistors from manufacturers like Diodes Inc. or ROHM, provided they match the SOT-363 package and electrical ratings.