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Product Detailed Parameters
- Description：TRANS PREBIAS 2PNP 50V SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
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Overview
The MUN5132DW1T1G is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two PNP transistors integrated with monolithic bias resistor networks in an SC-70-6 package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of -100 mA. The device includes typical input resistors of 4.7 kOhms with a resistance ratio of 1. Power dissipation is rated at 250 mW, supporting operation between -55°C and +150°C.
Feature Summary
- Integrates two PNP transistors with built-in bias resistors to simplify circuit design.
- Reduces board space and component count by replacing discrete transistor-resistor networks.
- Designed for low-power surface mount applications requiring compact packaging.
Applications
- General-purpose switching circuits
- Driver circuits for logic interfaces
- Battery management systems
Procurement Notes
Verify the specific ordering suffix DW1T1G to confirm the SC-70-6 package and tape-and-reel quantity. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the handling guidelines.
Selection Notes
Select this component when a dual PNP configuration with fixed bias ratios is required. Compare input resistance values against drive source capabilities to ensure proper saturation. Verify thermal performance within the 250 mW dissipation limit under expected operating temperatures.
Part Context
This part belongs to the MUN5132 series of dual BRTs. It shares functional similarities with other onsemi digital transistors but differs in polarity and internal resistance configurations. It serves as a direct replacement for discrete PNP transistor pairs with external biasing components.
Replacement Considerations
Substitutes include MUN5132T1G for single-channel applications or other MUN51xx series variants with matching polarity and voltage ratings. Verify pinout compatibility and thermal characteristics before implementation.
