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The onsemi MUN5133DW1T1 is a dual Bias Resistor Transistor (BRT) containing two PNP silicon transistors with monolithic bias networks in an SOT-363 package. Each transistor integrates a series base resistor and a base-emitter resistor to replace discrete components. Key electrical ratings include a collector-emitter voltage of -50 Vdc, a collector current of -100 mAdc, and a total device power dissipation of 250 mW at 25°C. The typical input resistors are R1 = 4.7 kΩ and R2 = 47 kΩ, yielding a ratio of 0.1. The DC current gain (hFE) has a minimum value of 80.
Verify the specific ordering suffix against official documentation to confirm shipping configuration and marking codes. Ensure compatibility with standard SMT reflow processes by consulting the manufacturer's soldering guidelines. Confirm that the selected variant meets all required environmental compliance standards for the intended deployment.
Select this component when a dual PNP digital transistor solution is required with specific internal resistance values. The integrated network simplifies biasing compared to discrete setups. Verify that the -50 V collector-emitter rating and -100 mA current limits accommodate the maximum expected operating conditions within the target circuit topology.
This part belongs to the MUN5111DW1T1 series of preferred devices from onsemi. These dual BRTs are designed to replace individual transistors and their associated external resistor bias networks. The series offers various resistor combinations within the same SOT-363 package form factor to suit different logic drive requirements.
Direct substitutes within the same series include MUN5132DW1T1 and MUN5134DW1T1, which share identical packaging and general characteristics but feature different internal resistor ratios.